Micro light-emitting diode displays having color conversion devices and assembly approaches

1. A micro light emitting diode pixel structure, comprising:

a plurality of micro light emitting diode devices in a dielectric layer;

a transparent conducting oxide layer above the dielectric layer; and

a color conversion device above the transparent conducting oxide layer, the color conversion device over only one micro light emitting diode device of the plurality of micro light emitting diode devices and not over the other micro light emitting diode devices of the plurality of micro light emitting diode devices.

2. The micro light emitting diode pixel structure of claim 1 , wherein the color conversion device comprises a color conversion device material layer sandwiched between a plurality of silicon oxide layers.

3. The micro light emitting diode pixel structure of claim 2 , wherein the color conversion device material layer comprises a photoresist with quantum dots therein.

4. The micro light emitting diode pixel structure of claim 2 , wherein the plurality of silicon oxide layers of the color conversion device comprises an oxide-oxide bond interface between the transparent conducting oxide layer and the color conversion device material layer.

5. The micro light emitting diode pixel structure of claim 1 , wherein the color conversion device is included in a passivation oxide layer, the passivation oxide layer over the transparent conducting oxide layer.

6. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices comprises a green micro light emitting diode device, a first blue micros light emitting diode device, and a second blue micro light emitting diode device.

7. The micro light emitting diode pixel structure of claim 6 , herein the color conversion device is over the second blue micro light emitting diode device.

8. The micro light emitting diode pixel structure of claim 7 , wherein the color conversion device coverts blue light from the second blue micro light emitting diode device to red light.

9. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices is a plurality of GaN nanowire-based or nanopyramid-based micro light emitting diode devices.

10. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices, the transparent conducting oxide layer, and the color conversion device form a front plane of the micro light emitting diode pixel structure, and wherein the micro light emitting diode pixel structure further comprises a backplane beneath the front plane, the backplane comprising:

a glass substrate having an insulating layer thereon; and

a plurality of pixel thin film transistor circuits in and on the insulating layer, each of the pixel thin film transistor circuits comprising a gate electrode and a channel comprising polycrystalline silicon or indium gallium zinc oxide (IGZO).

11. The micro light emitting diode pixel structure of claim 10 , wherein each of the pixel thin film transistor circuits is to drive at least one of the plurality of micro light emitting diode devices.

12. The micro light emitting diode pixel structure of claim 10 , wherein each of the pixel thin film transistor circuits comprises a current mirror and a linearized transconductance amplifier coupled to the current mirror.

13. A micro light emitting diode pixel structure, comprising:

a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon;

a plurality of micro light emitting diode devices in a second dielectric layer above the first dielectric layer, individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures, wherein the second dielectric layer is separate and distinct from the first dielectric layer;

a transparent conducting oxide layer on the plurality of micro light emitting diode devices and on the second dielectric layer; and

a color conversion device above the transparent conducting oxide layer, the color conversion device over only one micro light emitting diode device of the plurality of micro light emitting diode devices and not over the other micro light emitting diode devices of the plurality of micro light emitting diode devices.

14. The micro light emitting diode pixel structure of claim 13 , wherein the plurality of micro light emitting diode devices comprises a green micro light emitting diode device, a first blue micro light emitting diode device, and a second blue micro light emitting diode device.

15. The micro light emitting diode pixel structure of claim 14 , wherein the color conversion device is over the second blue micro light emitting diode device.

16. The micro light emitting diode pixel structure of claim 15 , wherein the color conversion device coverts blue light from the second blue micro light emitting diode device to red light.

17. The micro light emitting diode pixel structure of claim 13 , wherein the substrate is a silicon substrate comprising metal oxide semiconductor (CMOS) devices or thin film transistor (TET) devices coupled to the plurality of conductive interconnect structures.

18. A micro light emitting diode pixel structure, comprising:

a plurality of micro light emitting diode devices in a first dielectric layer;

a micro light emitting diode device in a second dielectric layer, the second dielectric layer above the first dielectric layer, wherein the micro light emitting diode device in the second dielectric layer is offset from the plurality of micro light emitting diode devices in the first dielectric layer; and

a transparent conducting oxide layer above the second dielectric layer.

19. The micro light emitting diode pixel structure of claim 18 , wherein the transparent conducting oxide layer is further in openings in the second dielectric layer over the micro light emitting diode device in the second dielectric layer and over each of the plurality of micro light emitting diode devices in the first dielectric layer.

20. The micro light emitting diode pixel structure of claim 18 , wherein the plurality of micro light emitting diode devices in the first dielectric layer comprises a green micro light emitting diode device and a blue micro light emitting diode device, and wherein the micro light emitting diode device in the second dielectric layer is a red micro light emitting diode device.

21. The micro light emitting diode pixel structure of claim 18 , wherein the plurality of micro light emitting diode devices in the first dielectric layer is a plurality of GaN nanowire-based or nanopyramid-based micro light emitting diode devices.

22. The micro light emitting diode pixel structure of claim 21 , wherein the micro light emitting diode device in the second dielectric layer is a GaN nanowire-based or nanopyramid-based micro light emitting diode device.

23. The micro light emitting diode pixel structure of claim 21 , wherein the micro light emitting diode device in the second dielectric layer is an organic light emitting diode device.

24. The micro light emitting diode pixel structure of claim 18 , further comprising;

a glass substrate having insulating layer thereon; and

a plurality of pixel thin film transistor circuits in and on the insulating layer, each of the pixel thin film transistor circuits to drive at least one of the micro light emitting diode device in the second dielectric layer and the plurality of micro light emitting diode devices in the first dielectric layer.

25. The micro light emitting diode pixel structure of claim 24 , wherein each of the pixel thin film transistor circuits comprises a gate electrode and a channel comprising polycrystalline silicon or indium gallium zinc oxide (IGZO).

26. A micro light emitting diode pixel structure, comprising:

a plurality of micro light emitting diode devices in a dielectric layer;

a transparent conducting oxide layer above the dielectric layer; and

a color conversion device above the transparent conducting oxide layer and over one of the plurality of micro light emitting diode devices, wherein the color conversion device comprises a color conversion device material layer sandwiched between a plurality of silicon oxide layers, and wherein the plurality of silicon oxide layers of the color conversion device comprises an oxide-oxide bond interface between the transparent conducting oxide layer and the color conversion device material layer.

27. A micro light emitting pixel structure, comprising:

a plurality of micro light emitting diode devices in a dielectric layer;

a transparent conducting oxide layer above the dielectric layer; and

a color conversion device above the transparent conducting oxide layer and over one of the plurality of micro light emitting diode devices, wherein the plurality of micro light emitting diode devices comprises a green micro light emitting diode device, a first blue micro light emitting; diode device, and a second blue micro light emitting diode device.

28. A micro light emitting; pixel structure, comprising:

a plurality of micro light emitting diode devices in a dielectric layer;

a transparent conducting oxide layer above the dielectric layer; and

a color conversion device above the transparent conducting oxide layer and over one of the plurality of micro light emitting diode devices, wherein the plurality of micro light emitting diode devices, the transparent conducting oxide layer, and the color conversion device form a front plane of the micro light emitting diode pixel structure, and wherein the micro light emitting diode pixel structure further comprises a backplane beneath the front plane, the backplane comprising:

a glass substrate having an insulating :layer thereon; and

a plurality of pixel thin film transistor circuits in and on the insulating layer, each of the pixel thin film transistor circuits comprising a gate electrode and a channel comprising polycrystalline silicon or indium gallium zinc oxide (IGZO), wherein each of the pixel thin film transistor circuits comprises a current mirror and a linearized transconductance amplifier coupled to the current mirror.