IP Library Granted Patent US 11,613,824
Granted Patent B2
US 11,613,824 · App. 16/803,967 · Granted Mar 28, 2023

Bamboo-like copper crystal particles having a highly preferred orientation

Inventors: Yun Zhang (Suzhou, CN); Jing Wang (Suzhou, CN); Zifang Zhu (Nujiang, CN); Tao Ma (Suzhou, CN); Luming Chen (Suzhou, CN)
Assignee: SUZHOU SHINHAO MATERIALS LLC
C25D3/38B32B15/01C30B28/04C30B29/02B32B2307/704B32B2311/12
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Quick Facts
Patent No.
US 11,613,824
App. No.
16/803,967
Granted
Mar 28, 2023
Kind
B2
Abstract

An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 μm in the long axis direction and a length of 20 nm to 2 μm in the short axis direction. The bamboo-like copper crystal particles have a uniform particle size, and the electroplating copper layer has a major diffraction peak at a 2θ angle of about 44°.

Claims (13)

1. An electroplated copper layer comprising:

a first plurality of copper crystal particles having a first orientation, the first orientation being a direction perpendicular to a copper substrate on which the electroplated copper layer is deposited; and

a second plurality of copper crystal particles having a second orientation, the second orientation and the first orientation forms an angle of greater than 0° and less than 45°, and the second plurality of copper crystal particles constituting 50-90% of a total of the first plurality of copper crystal particles and the second plurality of copper crystal particles,

wherein the first plurality of copper crystal particles have a length of 20 nm to 5 μm in the first orientation and the second plurality of copper crystal particles have a length of 20 nm to 2 μm in the second orientation; and

where the electroplated copper layer is prepared by a method comprising:

providing a substrate;

conducting a direct current copper electroplating on the substrate in a copper plating solution at a plating current density of 3 to 30 A/dm 2 ; and

depositing the copper crystal particles on the substrate to form the electroplated copper layer,

wherein the copper plating solution includes copper plating additives and a copper plating base solution;

wherein the copper base solution includes copper sulfate, sulfuric acid, and a trace amount of hydrochloric acid or sodium chloride, and the copper base solution has a concentration of copper ions of 40-60 g/L, a concentration of sulfate ions of 80-120 g/L, and a concentration of chloride ions of 40-60 ppm;

wherein the copper plating additives include an accelerator, a suppressor, and a non-dye leveler, the accelerator has a concentration of 3 to 5 mL/L, the suppressor has a concentration of 5 to 15 mL/L, and the non-dye leveler has a concentration of 25 to 35 mL/L; and

wherein the non-dye leveler is

2. The electroplated copper layer of claim 1 , wherein the electroplated copper layer has a major diffraction peak at a 2θ angle of about 44°.

Assignments (2)
CHANGE OF NAME Recorded Jul 1, 2026
From: SHINHAO MATERIALS LLC
To: UMICORE (SUZHOU) SEMICONDUCTOR MATERIALS CO. LTD.
Reel/Frame 075150/0135 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2020
From: ZHANG, YUN; WANG, JING; ZHU, ZIFANG; MA, TAO; CHEN, LUMING
To: SUZHOU SHINHAO MATERIALS LLC
Reel/Frame 052048/0228 →
Priority Claims (1)
CN 201611037367.6 · Nov 23, 2016 · national
Continuity (2)
Division 15745685
Related Publication 20200208286A1 · Jul 2, 2020