Acoustic wave devices on stacked die
Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.
1. An acoustic wave device assembly comprising:
a first die including a first acoustic wave device configured to generate a boundary acoustic wave, the first acoustic wave device including a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer, the high acoustic velocity layers each having an acoustic velocity that is greater than a velocity of the boundary acoustic wave;
a second die stacked with the first die, the second die including a second acoustic wave device configured to generate a second boundary acoustic wave; and
a dielectric layer disposed between the first die and the second die.
2. The acoustic wave device assembly of claim 1 further comprising a third die stacked with the first die and the second die, the third die including a third acoustic wave device configured to generate a third boundary acoustic wave.
3. The acoustic wave device assembly of claim 1 wherein the first acoustic wave device further includes a temperature compensation layer disposed between the piezoelectric layer and a first high acoustic velocity layer of the high acoustic velocity layers.
4. The acoustic wave device assembly of claim 1 wherein a first high acoustic velocity layer of the high acoustic velocity layers is a silicon layer.
5. The acoustic wave device assembly of claim 1 wherein a first high acoustic velocity layer of the high acoustic velocity layers includes at least one of silicon nitride, aluminum nitride, diamond, quartz, or spinel.
6. The acoustic wave device assembly of claim 1 wherein the first acoustic wave device is included in a first acoustic wave filter and the second acoustic wave device is included in a second acoustic wave filter.
7. The acoustic wave device assembly of claim 1 further comprising a via extending through the first die.
8. The acoustic wave device assembly of claim 1 further comprising a wire bond extending from the second die.
9. The acoustic wave device assembly of claim 1 wherein the first die is electrically isolated from the second die.
10. An acoustic wave device assembly comprising:
a first die including a first acoustic wave device configured to generate a boundary acoustic wave, the first acoustic wave device including a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer, the high acoustic velocity layers each having an acoustic velocity that is greater than a velocity of the boundary acoustic wave;
a second die stacked with the first die, the second die including a second acoustic wave device configured to generate a second boundary acoustic wave; and
an air gap between the first die and the second die.
11. The acoustic wave device assembly of claim 10 further comprising a third die stacked with the first die and the second die, the third die including a third acoustic wave device configured to generate a third boundary acoustic wave.
12. The acoustic wave device assembly of claim 1 further comprising a metal shield disposed between the first die and the second die.
13. The acoustic wave device assembly of claim 1 wherein the second acoustic wave device includes a second piezoelectric layer, a second interdigital transducer electrode on the second piezoelectric layer, and second high acoustic velocity layers on opposing sides of the second piezoelectric layer, the second high acoustic velocity layers each having an acoustic velocity that is greater than a velocity of the second boundary acoustic wave.
14. A radio frequency module with acoustic wave filters, the radio frequency module comprising:
a first acoustic wave filter configured to filter a first radio frequency signal, the first acoustic wave filter including a first acoustic wave device on a first die and configured to generate a boundary acoustic wave, the first acoustic wave device including a piezoelectric layer and high acoustic velocity layers on opposing sides of the piezoelectric layer, the high acoustic velocity layers each having an acoustic velocity that is greater than a velocity of the boundary acoustic wave;
a second acoustic wave filter configured to filter a second radio frequency signal, the second acoustic wave filter including a second acoustic wave device on a second die and configured to generate a second boundary acoustic wave, the second die being stacked with the first die; and
a package enclosing the first acoustic wave filter and the second acoustic wave filter, the radio frequency module having a thickness that is less than 300 micrometers.
15. The radio frequency module of claim 14 further comprising at least one of an air gap or a dielectric layer disposed between the first die and the second die.
16. The radio frequency module of claim 14 wherein a duplexer includes the first acoustic wave filter and the second acoustic wave filter.
17. The radio frequency module of claim 14 further comprising a radio frequency switch coupled to the first acoustic wave filter and the second acoustic wave filter, the radio frequency switch being enclosed within the package.
18. The acoustic wave device assembly of claim 10 wherein the first acoustic wave device further includes a temperature compensation layer disposed between the piezoelectric layer and a first high acoustic velocity layer of the high acoustic velocity layers.
19. The acoustic wave device assembly of claim 10 wherein a first high acoustic velocity layer of the high acoustic velocity layers is a silicon layer.
20. The acoustic wave device assembly of claim 10 wherein the first acoustic wave device is included in a first acoustic wave filter and the second acoustic wave device is included in a second acoustic wave filter.
21. The acoustic wave device assembly of claim 10 wherein the second acoustic wave device includes a second piezoelectric layer, a second interdigital transducer electrode on the second piezoelectric layer, and second high acoustic velocity layers on opposing sides of the second piezoelectric layer, the second high acoustic velocity layers each having an acoustic velocity that is greater than a velocity of the second boundary acoustic wave.