Piezoelectric MEMS device with thermal compensation from different material thicknesses
A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.
1. A piezoelectric microelectromechanical systems device comprising:
a cavity bounded by walls; and
an asymmetrical bimorph structure at least partially spanning the cavity and including at least a top metal layer, an upper piezoelectric layer, a middle metal layer, a lower piezoelectric layer, and a bottom metal layer, the metal layers including electrode layers having relative thicknesses configured to compensate for expected temperature stress in the bimorph structure, with the top metal layer thicker than the middle and bottom metal layers by an amount configured to offset thermal stress affects that would exist if the two piezoelectric layers had the same thicknesses and the metal layers had the same thicknesses.
2. The device of claim 1 wherein the lower piezoelectric layer is thicker than the upper piezoelectric layer by an amount configured to offset thermal stress affects that would exist if the two piezoelectric layers had the same thickness.
3. A piezoelectric microelectromechanical systems device comprising:
a cavity bounded by walls; and
an asymmetrical bimorph structure at least partially spanning the cavity and including at least a top metal layer, an upper piezoelectric layer, a middle metal layer, a lower piezoelectric layer, and a bottom metal layer, the metal layers including electrode layers having relative thicknesses configured to compensate for expected temperature stress in the bimorph structure with the bottom metal layer thicker than the middle and top metal layers, and the lower piezoelectric layer thicker than the upper piezoelectric layer, each by amounts collectively configured to offset thermal stress affects that would exist if the two piezoelectric layers had the same thicknesses and the three metal layers had the same thicknesses.
4. The device of claim 1 further including a compensation layer deposited directly on one of the electrode layers and having a thickness configured to further compensate for the expected temperature stress in the bimorph structure.
5. The device of claim 1 wherein the cavity forms a resonant cavity for an acoustic sensor, the asymmetrical bimorph structure forms a resonator, and the relative thicknesses compensate for expected temperature stress, thereby causing the resonator to respond under expected temperature conditions the same way they are designed to respond without the temperature conditions.
6. The device of claim 1 wherein the expected temperature stress would cause bowing in one direction and the relative thicknesses cause bowing in an opposite direction, thereby compensating before the temperature stress occurs.
7. A piezoelectric microelectromechanical systems device comprising:
a layer set sensitive to acoustic vibration, the layers including at least one piezoelectric layer and a two metal electrode layers having the same thickness, the layer set having an expected thermal stress deflection corresponding to a first thermal condition;
a cavity having side walls supporting the layer set and providing space for acoustic vibration of the layer set into the cavity; and
a compensation layer deposited directly onto one of the two metal electrode layers, the compensation layer having a compensation thicknesses configured to compensate for the expected thermal stress deformation, such that the combined layer set and compensation layer do not have the stress deflection under the first thermal condition.
8. The device of claim 7 , wherein the layer set forms an acoustic membrane spanning the cavity, and between the cavity walls and the membrane is located a silicon dioxide layer.
9. A system for compensating for thermal stress m piezoelectric microelectromechanical systems devices at least partially spanning a cavity, the system comprising:
at least one piezoelectric layer at least partially spanning a cavity such that it generates electrical signals when external forces cause the piezoelectric layer to vibrate with respect to the cavity;
at least one electrode layer including a conductive metal positioned adjacent the piezoelectric layer and configured as an electrode to accept the electrical signals, the piezoelectric layer and electrode layer having an expected thermal stress tending to cause expected deflection even when external forces are not causing the piezoelectric layer to vibrate; and
a compensation layer positioned adjacent at least one of the piezoelectric layer and the at least one electrode layer, deposited on the piezoelectric layer, and configured to counteract the expected deflection from the expected thermal stress.
10. The system of claim 9 wherein the compensation layer has a selected thickness configured to resist pre-excitation bowing of the piezoelectric layer and the at least one electrode layer.
11. The system of claim 9 further comprising a second piezoelectric layer and a second electrode layer forming a stack with the at least one piezoelectric layer and the at least one electrode layer such that electrode and piezoelectric layers alternate.
12. The system of claim 9 , wherein the compensation layer has a thickness that compensates for the expected deflection.
13. The device of claim 3 further including a compensation layer deposited directly on one of the electrode layers and having a thickness configured to further compensate for the expected temperature stress in the bimorph structure.
14. The device of claim 3 wherein the cavity forms a resonant cavity for an acoustic sensor, the asymmetrical bimorph structure forms a resonator, and the relative thicknesses compensate for expected temperature stress, thereby causing the resonator to respond under expected temperature conditions the same way they are designed to respond without the temperature conditions.
15. The device of claim 3 wherein the expected temperature stress would cause bowing in one direction and the relative thicknesses cause bowing in an opposite direction, thereby compensating before the temperature stress occurs.