Elastic wave device with sub-wavelength thick piezoelectric layer and high velocity layer
Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer configured to inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance.
1. An elastic wave device comprising:
a piezoelectric layer having a cut angle in a cut angle range from −10° to 30°;
an interdigital transducer electrode on the piezoelectric layer; and
a high velocity layer in physical contact with the piezoelectric layer, the high velocity layer having a higher bulk velocity than a velocity of an elastic wave, the elastic wave device configured to generate the elastic wave with a wavelength of λ, and the piezoelectric layer having a thickness in a thickness range from 0.35λ to 0.8λ.
2. The elastic wave device of claim 1 wherein the piezoelectric layer includes a lithium niobate layer.
3. The elastic wave device of claim 1 wherein the piezoelectric layer includes a lithium tantalate layer.
4. The elastic wave device of claim 1 wherein the high velocity layer is a silicon layer.
5. The elastic wave device of claim 1 wherein the cut angle is in a range from 20° to 30°.
6. The elastic wave device of claim 1 wherein the high velocity layer is configured to inhibit the elastic wave from leaking from the piezoelectric layer at anti-resonance, the elastic wave device being included in a ladder filter.
7. The elastic wave device of claim 1 further comprising a temperature compensating layer having a positive temperature coefficient of frequency, the interdigital transducer electrode being disposed between the temperature compensating layer and the piezoelectric layer, and the elastic wave being a surface acoustic wave.
8. The elastic wave device of claim 7 wherein the temperature compensating layer has a thickness of less than 0.5λ.
9. An elastic wave device comprising:
a lithium niobate layer having a cut angle in a cut angle range from −10° to 60°;
an interdigital transducer electrode on the lithium niobate layer; and
a silicon substrate in physical contact with the lithium niobate layer, the elastic wave device configured to generate an elastic wave having a wavelength of λ, and the lithium niobate layer having a thickness in a thickness range from 0.35λ to 0.8λ.
10. The elastic wave device of claim 9 wherein the cut angle is in a range from 15° to 35°.
11. The elastic wave device of claim 9 wherein the thickness of the lithium niobate layer is in a range from 0.4λ to 0.75λ.
12. The elastic wave device of claim 9 wherein the interdigital transducer electrode has a thickness in a second thickness range from 0.02λ to 0.1λ.
13. The elastic wave device of claim 9 further comprising a temperature compensating layer having a positive temperature coefficient of frequency, the interdigital transducer electrode being disposed between the temperature compensating layer and the lithium niobate layer, and the elastic wave being a surface acoustic wave.
14. A surface acoustic wave device comprising:
a piezoelectric layer having a cut angle in a cut angle range from −10° to 60°;
an interdigital transducer electrode on the piezoelectric layer;
a silicon layer configured to inhibit a surface acoustic wave from leaking from the piezoelectric layer at anti-resonance, the piezoelectric layer being disposed between the silicon layer and the interdigital transducer electrode; and
a temperature compensating layer having a positive temperature coefficient of frequency, interdigital transducer electrode being disposed between the temperature compensating layer and the piezoelectric layer, the surface acoustic wave device configured to generate the surface acoustic wave with a wavelength of λ, and the piezoelectric layer having a thickness in a thickness range from 0.25λ to 0.8λ.
15. The surface acoustic wave device of claim 14 wherein the thickness of the temperature compensating layer is at least 0.1λ and less than 0.5λ.
16. The surface acoustic wave device of claim 14 wherein the temperature compensating layer includes silicon dioxide.
17. The surface acoustic wave device of claim 14 wherein the cut angle is between 15° and 35°.
18. The surface acoustic wave device of claim 14 wherein the interdigital transducer electrode has a thickness between 0.02λ and 0.1λ.
19. The surface acoustic wave device of claim 14 wherein the piezoelectric layer is a lithium niobate layer.
20. The surface acoustic wave device of claim 14 wherein the silicon layer is in physical contact with the piezoelectric layer.