Acoustic wave devices with common ceramic substrate
An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.
1. An acoustic wave component comprising:
a bulk acoustic wave resonator including an air cavity between at least a portion of a ceramic substrate and at least one electrode; and
a surface acoustic wave device disposed in the air cavity, the surface acoustic wave device including a piezoelectric layer above the ceramic substrate, and an interdigital transducer electrode above the piezoelectric layer.
2. The acoustic wave component of claim 1 wherein the bulk acoustic wave resonator includes a second piezoelectric layer positioned over the air cavity and beneath the one electrode.
3. The acoustic wave component of claim 2 wherein the bulk acoustic wave resonator includes a passivation layer above the air cavity and below the second piezoelectric layer.
4. The acoustic wave component of claim 2 wherein the second piezoelectric layer is at least partially positioned above the surface acoustic wave device.
5. The acoustic wave component of claim 1 wherein the ceramic substrate is a spinel substrate.
6. The acoustic wave component of claim 1 wherein the bulk acoustic wave resonator includes a frame structure along an edge of an active region of the bulk acoustic wave resonator.
7. The acoustic wave component of claim 1 wherein the bulk acoustic wave resonator is a film bulk acoustic wave resonator.
8. The acoustic wave component of claim 1 further comprising a receive filter and a transmit filter coupled to each other at a common node, the receive filter including the surface acoustic wave device and the transmit filter including the bulk acoustic wave resonator.
9. The acoustic wave component of claim 8 wherein the transmit filter further includes another surface acoustic wave device on the ceramic substrate.
10. The acoustic wave component of claim 8 wherein the transmit filter further includes a loop circuit configured to generate an anti-phase signal to a target signal at a particular frequency, and the loop circuit includes another surface acoustic wave device on the ceramic substrate.
11. The acoustic wave component of claim 8 wherein the receive filter further includes a loop circuit configured to generate an anti-phase signal to a target signal at a particular frequency, and the loop circuit includes another surface acoustic wave resonator on the ceramic substrate.
12. A multiplexer comprising:
a first filter including a bulk acoustic wave resonator, the bulk acoustic wave resonator including an air cavity between at least a portion of a ceramic substrate and at least one electrode; and
a second filter coupled to the first filter at a common node, the second filter including a surface acoustic wave device disposed in the air cavity, the surface acoustic wave device including a piezoelectric layer on the ceramic substrate, and an interdigital transducer electrode above the piezoelectric layer.
13. The multiplexer of claim 12 wherein the ceramic substrate is a spinel substrate.
14. The multiplexer of claim 12 wherein the bulk acoustic wave resonator includes a frame structure along an edge of an active region of the bulk acoustic wave resonator.
15. An acoustic wave component comprising:
a film bulk acoustic wave resonator including an air cavity between at least a portion of a ceramic substrate and at least one electrode; and
another type of acoustic wave resonator disposed in the air cavity.
16. The acoustic wave component of claim 15 wherein the ceramic substrate is a spinel substrate.
17. The acoustic wave component of claim 15 wherein the other type of acoustic wave resonator is a surface acoustic wave resonator.
18. The acoustic wave component of claim 15 wherein the other type of acoustic wave resonator is a solidly mounted resonator.
19. The acoustic wave component of claim 18 wherein the film bulk acoustic wave resonator includes a piezoelectric layer and a passivation layer, the passivation layer being above the air cavity and below the piezoelectric layer.
20. The acoustic wave component of claim 15 wherein the film bulk acoustic wave resonator includes a piezoelectric layer positioned over the air cavity.
21. The acoustic wave component of claim 20 wherein the film bulk acoustic wave resonator includes a passivation layer above the air cavity and below the piezoelectric layer.