Sputtering target, magnetic film, and perpendicular magnetic recording medium
Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.
1. A sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt, wherein the sputtering target does not contain Mn.
2. The sputtering target according to claim 1 , wherein the sputtering target contains a part or all of Bi as a metal oxide.
3. The sputtering target according to claim 1 , wherein the sputtering target contains 0.5 at % or more of Bi.
4. The sputtering target according to claim 1 , wherein the metal oxide comprises an oxide of at least one element selected from the group consisting of Co, Cr, Si, Ti, and B.
5. The sputtering target according to claim 1 , wherein the sputtering target further contains from 0.5 at % to 30 at % of at least one selected from the group consisting of Au, Ag, B, Cu, Cr, Ge, Ir, Mo, Nb, Ni, Pd, Re, Rh, Ru, Ta, W, and V.
6. The sputtering target according to claim 1 , wherein the sputtering target contains 0.05 at % to 10 at % of Bi.