Semiconductor memory device
The present technology relates to a semiconductor memory device. The semiconductor memory device includes a plurality of channel plugs disposed in a cell region of a semiconductor substrate, a first dummy region and a second dummy region disposed at both end portions of the cell region, and first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region. A critical value of the first dummy plugs arranged in the first dummy region is different from a critical value of the second dummy plugs disposed in the second dummy region.
1. A semiconductor memory device comprising:
a plurality of channel plugs disposed in a cell region of a semiconductor substrate;
a first dummy region and a second dummy region disposed at both end portions of the cell region; and
first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region,
wherein a critical value of the first dummy plugs arranged in the first dummy region is different from a critical value of the second dummy plugs disposed in the second dummy region, and
wherein the critical value of the first dummy plugs is a horizontal width of an upper end portion of each of the first dummy plugs and the critical value of the second dummy plugs is a horizontal width of an upper end portion of each of the second dummy plugs.
2. The semiconductor memory device of claim 1 , further comprising:
an X decoder region adjacent to the first dummy region, wherein the X decoder region and the cell region are disposed at opposing sides of the first dummy region.
3. The semiconductor memory device of claim 2 , further comprising:
an X decoder disposed in the X decoder region of the semiconductor substrate.
4. The semiconductor memory device of claim 3 , wherein the X decoder is formed in a layer lower than the first dummy plugs, the plurality of channel plugs, and the second dummy plugs.
5. The semiconductor memory device of claim 4 , wherein the plurality of channel plugs are connected, in parallel, to a plurality of word lines, and
the plurality of word lines are connected to the X decoder through a plurality of metal wires, extending, in a vertical direction, to the X decoder region.
6. The semiconductor memory device of claim 5 , wherein the plurality of word lines are arranged in a step-wise structure in the X decoder region.
7. The semiconductor memory device of claim 6 , wherein the X decoder region further includes an interlayer insulating film stacked on the plurality of word lines of the step-wise structure.
8. The semiconductor memory device of claim 1 , wherein the critical value of the first dummy plugs is greater than the critical value of the second dummy plugs.
9. The semiconductor memory device of claim 1 , wherein the critical value of the second dummy plugs is greater than the critical value of the first dummy plugs.
10. A semiconductor memory device comprising:
a plurality of channel plugs disposed in a cell region of a semiconductor substrate;
a first dummy region and a second dummy region disposed at both end portions of the cell region; and
first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region,
wherein a distance between the first dummy plugs arranged in the first dummy region is different from a distance between the second dummy plugs disposed in the second dummy region.
11. The semiconductor memory device of claim 10 , further comprising:
an X decoder arranged in an X decoder region.
12. The semiconductor memory device of claim 10 , wherein the distance between the first dummy plugs is greater than the distance between the second dummy plugs.
13. The semiconductor memory device of claim 10 , wherein the distance between the second dummy plugs is greater from the distance between the first dummy plugs.
14. A semiconductor memory device comprising:
a plurality of channel plugs disposed in a cell region of a semiconductor substrate;
a first dummy region and a second dummy region disposed at both end portions of the cell region; and
first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region,
wherein a critical value of the first dummy plugs arranged in the first dummy region is different from a critical value of the second dummy plugs disposed in the second dummy region,
wherein a distance between the first dummy plugs is different from a distance between the second dummy plugs, and
wherein the critical value of the first dummy plugs is a horizontal width of an upper end portion of each of the first dummy plugs and the critical value of the second dummy plugs is a horizontal width of an upper end portion of each of the second dummy plugs.
15. The semiconductor memory device of claim 14 , further comprising:
an X decoder arranged in an X decoder region.
16. The semiconductor memory device of claim 14 , wherein the critical value of the first dummy plugs is greater from the critical value of the second dummy plugs.
17. The semiconductor memory device of claim 16 , wherein the distance between the first dummy plugs is greater from the distance between the second dummy plugs.
18. The semiconductor memory device of claim 14 , wherein the critical value of the second dummy plugs is greater from the critical value of the first dummy plugs.
19. The semiconductor memory device of claim 18 , wherein the distance between the second dummy plugs is greater from the distance between the first dummy plugs.