Method of forming a 2-dimensional channel material, using ion implantation

1. A method to form a 2-Dimensional transistor channel, comprising:

depositing an amorphous layer on a substrate;

implanting an implant species into the amorphous layer; and

annealing the amorphous layer to form a doped crystalline layer.

2. The method of claim 1 , the amorphous layer comprising a transition metal dichalcogenide.

3. The method of claim 1 , the amorphous layer comprising MoS x C y .

4. The method of claim 3 , the depositing comprising:

providing a first precursor chosen from a group consisting of tetrakis(dimethylamino)molybdenum, tetrakis(ethylmethylamino)molybdenum, molybdenum hexacarbonyl, tris(2,2,6,6-tetramethylheptane-3,5-dionato)molybdenum, and bis(tert-butylimido)-bis(dimethylamido)molybdenum for depositing Mo; and

providing a second precursor chosen from a group consisting of 1,2-ethanedithiol, diethyl sulfide, diethyl disulfide, and dimethyl disulfide for depositing S.

5. The method of claim 1 , the depositing the amorphous layer comprising performing atomic layer deposition at a deposition temperature, at or below 120° C.

6. The method of claim 5 , wherein the performing the atomic layer deposition comprises performing a plurality of deposition cycles to deposit at least one monolayer of material.

7. The method of claim 6 , wherein one monolayer of material is deposited, the method further comprising depositing an overlayer on the amorphous layer before the implanting.

8. The method of claim 1 , the implant species selected from a group consisting of He, B, C, N, F, Ne, Al, Si, As, P, Ar, N 2 , As 2 , P 2 and any combination thereof.

9. The method of claim 1 , wherein the annealing comprises performing rapid thermal processing at a temperature of 800° C. to 1000° C., using an anneal ambient comprising N 2 , Ar, H 2 S, H 2 Se or mixtures thereof.

10. The method of claim 1 , wherein the implant species is implanted at an energy of 0.01-10 keV.

11. The method of claim 1 , wherein the implant species is implanted at a substrate temperature of −100° C. to 550° C.

12. The method of claim 1 , wherein the implant species is implanted at a tilt angle of zero degrees to 80 degrees.

13. The method of claim 1 , wherein the implanting is performed by plasma doping using a dopant selected from a group consisting of PH 3 , AsH 3 , N 2 , He, H 2 , Ar and any mixtures thereof at an implant voltage of 0.01 kV-10 kV.

14. The method of claim 1 , the implant species comprising an implant energy of 200 eV or below.

15. A method to form a 2-Dimensional transistor channel, comprising:

depositing an amorphous layer;

performing a doping process to introduce a dopant into the amorphous layer; and

annealing the amorphous layer to form a doped crystalline layer.

16. The method of claim 15 , wherein the amorphous layer is deposited on a substrate, and wherein the performing the doping process comprises implanting a dopant species into the amorphous layer, while not implanting the dopant species into the substrate.

17. The method of claim 15 , the amorphous layer comprising a transition metal dichalcogenide.

18. The method of claim 15 , the amorphous layer comprising MoS x C y .

19. The method of claim 15 , the depositing the amorphous layer comprising performing atomic layer deposition at a deposition temperature, at or below 120° C., wherein the performing the atomic layer deposition comprises performing at least one deposition cycle to deposit at least one monolayer of material, and not more than 10 monolayers of material.

20. A method of forming a memory device, comprising:

providing a substrate, the substrate having an amorphous MoS x C y layer formed in a channel region;

implanting an implant species into the amorphous MoS x C y layer; and

annealing the amorphous MoS x C y layer to form a doped MoS 2 crystalline layer.