IP Library Granted Patent US 11,626,333
Granted Patent B2
US 11,626,333 · App. 17/220,461 · Granted Apr 11, 2023

Semiconductor device

Inventor: Nobuhiro Higashi (Nagano, JP)
Assignee: FUJI ELECTRIC CO., LTD.
H01L23/049H01L23/08H01L23/295H01L23/3735H01L24/32H01L24/48H01L24/73H01L25/072H01L25/18H01L2224/32225H01L2224/48137H01L2224/48175H01L2224/73265H01L2924/1033H01L2924/10253H01L2924/10272H01L2924/12031H01L2924/12032H01L2924/13055H01L2924/13091H01L2924/1579H01L2924/15787H01L2924/17791H01L2924/351
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Quick Facts
Patent No.
US 11,626,333
App. No.
17/220,461
Granted
Apr 11, 2023
Kind
B2
Abstract

A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

Claims (27)

1. A semiconductor device, comprising:

a semiconductor chip;

a case having a frame portion that has an inner wall portion surrounding a housing area in which the semiconductor chip is disposed;

a buffer member provided on at least part of the inner wall portion of the case on a side of the housing area;

a low expansion member provided on the buffer member that is on said at least part of the inner wall portion of the case; and

a sealing member that seals the housing area so as to be in in contact with the low expansion member,

wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and

wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

2. The semiconductor device according to claim 1 , wherein the buffer member joins said at least part of the inner wall portion and the low expansion member.

3. The semiconductor device according to claim 1 , wherein the linear expansion coefficient of the low expansion member is 5×10 −6 /K or more and less than 25×10 −6 /K.

4. The semiconductor device according to claim 1 , wherein the elastic modulus of the buffer member is 0.1 MPa or more and 1 GPa or less.

5. The semiconductor device according to claim 1 , wherein the low expansion member and the sealing member are respectively epoxy resins containing a filler.

6. The semiconductor device according to claim 1 , wherein the buffer member contains silicone rubber as a main component.

7. The semiconductor device according to claim 1 , wherein the case is mainly composed of a polyphenylene sulfide (PPS) resin containing a filler.

8. The semiconductor device according to claim 1 ,

wherein the housing area has a rectangular shape in a plan view, and

wherein said at least part of the inner wall portion of the case on which the buffer member and the low expansion member are provided is located at a short side of the rectangular shape of the housing area.

9. The semiconductor device according to claim 8 , wherein said at least part of the inner wall portion of the case on which the buffer member and the low expansion member are provided is located at a long side of the housing area as well as the short side of the rectangular shape of the housing area.

10. The semiconductor device according to claim 1 , further comprising an external connection terminal that is provided on the inner wall portion of the case, the external connection terminal having one end electrically connected to the semiconductor chip, and another end that is located outside the case.

11. The semiconductor device according to claim 10 , wherein a groove accommodating the external connection terminal is formed in the inner wall portion of the case where the external connection terminal is provided.

12. The semiconductor device according to claim 10 , wherein the external connection terminal includes a horizontal portion including said one end of the external connection terminal and a vertical portion extending vertically from the horizontal portion and including said another end of the external connection terminal, thereby having an L-shaped cross section.

13. The semiconductor device according to claim 12 , wherein the low expansion member covers at least a portion of the vertical portion of the external connection terminal.

14. The semiconductor device according to claim 13 ,

wherein said one end of the external connection terminal includes a bonding region to which a wiring member electrically connected to the semiconductor chip is joined, and

wherein the low expansion member exposes at least the bonding region and covers the horizontal portion of the external connection terminal.

15. The semiconductor device according to claim 14 , wherein the low expansion member has an opening that exposes the bonding region of the external connection terminal.

16. The semiconductor device according to claim 11 , wherein the low expansion member has a groove portion accommodating the external connection terminal on a back surface of the low expansion member, and the low expansion member is attached on the inner wall portion of the case with the external connection terminal fitted into the groove portion thereof.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2021
From: HIGASHI, NOBUHIRO
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 055799/0789 →
Priority Claims (1)
JP JP2020-090098 · May 22, 2020 · national
Continuity (1)
Related Publication 20210366796A1 · Nov 25, 2021
Cited By (1)
US 12,653,040