Semiconductor devices and methods of manufacturing semiconductor devices
View Patent ↗In one example, a semiconductor device comprises a main substrate comprising a first side and a main conductive structure, and a first component module over the first side of the main substrate. The first component module comprises a first electronic component and a first module encapsulant contacting a lateral side of the first electronic component. The semiconductor device further comprises a second component module over the first side of the main substrate. The second component module comprises a second electronic component and a second module encapsulant contacting a lateral side of the second electronic component. The semiconductor device further comprises a main encapsulant over a first side of the main substrate and between the first component module and the second component module. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a main substrate comprising a first side and a main conductive structure;
a first component module over the first side of the main substrate, the first component module comprising:
a first electronic component above a topmost side of the main substrate; and
a first module encapsulant contacting a lateral side of the first electronic component;
a second component module over the first side of the main substrate, the second component module comprising:
a second electronic component above the topmost side of the main substrate; and
a second module encapsulant contacting a lateral side of the second electronic component;
a main encapsulant over the first side of the main substrate and external to the topmost side of the main substrate, and between the first component module and the second component module; and
a vertical interconnect in the main encapsulant and coupled with the main conductive structure, wherein the vertical interconnect is coupled with the topmost side of the main substrate.
2. The semiconductor device of claim 1 , wherein one end of the vertical interconnect is exposed at the topmost side of the main encapsulant.
3. The semiconductor device of claim 1 , wherein the first component module comprises a first module substrate external to the main substrate and comprising a first module conductive structure coupled with the first electronic component and the main conductive structure.
4. The semiconductor device of claim 3 , wherein the first module substrate contacts the first side of the main substrate.
5. The semiconductor device of claim 1 , wherein the first component module comprises a first module substrate external to the main substrate and comprising a first module conductive structure coupled with the first electronic component, and a module interconnect coupled with the first module conductive structure.
6. The semiconductor device of claim 5 , wherein the module interconnect is external to the main substrate and external to the first module substrate and is coupled with the main conductive structure.
7. The semiconductor device of claim 5 , wherein the main encapsulant extends between the first side of the main substrate and the first module substrate.
8. The semiconductor device of claim 1 , wherein the main encapsulant covers a first side of the first component module, the first module encapsulant contacts a top side of the first electronic component, and the second module encapsulant contacts a top side of the second electronic component.
9. The semiconductor device of claim 1 , wherein a first side of the first component module is exposed through the main encapsulant.
10. The semiconductor device of claim 1 , wherein the first component module comprises a shield contacting a lateral side of the first module encapsulant between the first component module and the second component module.
11. The semiconductor device of claim 10 , wherein the main encapsulant covers a first side of the shield.
12. The semiconductor device of claim 10 , wherein one side of the shield is exposed through the main encapsulant.
13. The semiconductor device of claim 10 , wherein the shield is coupled with the main substrate.
14. The semiconductor device of claim 10 , wherein the first component module comprises a first module substrate comprising a first module conductive structure, and the shield is coupled with the first module conductive structure.
15. A semiconductor device, comprising:
a main substrate comprising a first side and a main conductive structure;
a first component module over the first side of the main substrate, the first component module comprising:
a first electronic component above a topmost side of the main substrate; and
a first module encapsulant contacting a lateral side of the first electronic component;
a second component module over the first side of the main substrate, the second component module comprising:
a second electronic component above the topmost side of the main substrate; and
a second module encapsulant contacting a lateral side of the second electronic component; and
a main encapsulant over the first side of the main substrate and external to the topmost side of the main substrate, and between the first component module and the second component module;
wherein the first component module comprises a shield contacting a lateral side of the first module encapsulant between the first component module and the second component module.
16. The semiconductor device of claim 15 , wherein a first side of the first component module is exposed through the main encapsulant.
17. The semiconductor device of claim 15 , wherein the main encapsulant covers a first side of the shield.
18. The semiconductor device of claim 15 , wherein one side of the shield is exposed through the main encapsulant.
19. The semiconductor device of claim 15 , wherein the shield is coupled with the main substrate.
20. The semiconductor device of claim 15 , wherein the first component module comprises a first module substrate comprising a first module conductive structure, and the shield is coupled with the first module conductive structure.