Ultra high purity conditions for atomic scale processing

1. An apparatus for atomic scale processing, comprising:

a reactor having inner and outer surfaces;

wherein at least a portion of the inner surfaces define an internal volume of the reactor;

a fixture assembly positioned within the internal volume of the reactor having a surface configured to hold a substrate within the internal volume of the reactor;

a process gas source; and

an inductively coupled plasma source;

wherein the inductively coupled plasma source and the reactor are connected at a first connection point;

wherein the first connection point comprises a first elastomeric seal and a second elastomeric seal spaced apart from the first elastomeric seal to define a first volume there between;

wherein the first volume is a vacuum, or the first volume is actively purged and/or backfilled with a process gas,

wherein the process gas source and the inductively coupled plasma source are connected at a second connection point;

wherein the second connection point comprises a third elastomeric seal and a fourth elastomeric seal spaced apart from the third elastomeric seal to define a second volume therebetween;

wherein the second volume is a vacuum, or the second volume is actively purged and/or backfilled with a process gas, and

wherein at least one of the first elastomeric seal, the second elastomeric seal, the third elastomeric seal, and the fourth elastomeric seal creates a surface contact with at least three different components of the apparatus for atomic scale processing.

2. The apparatus of claim 1 , wherein the inductively coupled plasma source comprises a cooling arrangement;

wherein the cooling arrangement provides active cooling at the first and second connection points.

3. The apparatus of claim 2 , wherein the cooling arrangement comprises one or more heat sinks.

4. The apparatus of claim 2 , wherein the cooling arrangement comprises one or more water-cooled base plates.

5. The apparatus of claim 2 , wherein the cooling arrangement comprises one or more water-cooled mounting flanges.

6. The apparatus of claim 2 , wherein the cooling arrangement comprises a cooling fan.

7. The apparatus of claim 2 , wherein the cooling arrangement comprises a cooling fan.

8. The apparatus of claim 1 , wherein the inductively coupled plasma source comprises a dielectric tube, and wherein the dielectric tube comprises fused silica, ceramic alumina, sapphire, or a combination thereof.

9. The apparatus of claim 1 , wherein a partial pressure of each background impurity within the internal volume of the reactor is below approximately 10 −6 Torr to reduce said background impurities role in surface reactions before, during and after atomic scale processing.

10. The apparatus of claim 1 , wherein a continuous, inactive gas flow is maintained from the process gas source to the ICP source and the reactor.

11. A method of reducing background impurities during atomic scale processing, comprising:

providing the apparatus of claim 1 for atomic scale processing comprising a reactor having inner and outer surfaces, wherein at least a portion of the inner surfaces define an internal volume of the reactor;

providing a fixture assembly positioned within the internal volume of the reactor having a surface configured to hold a substrate within the internal volume of the reactor;

providing a first elastomeric seal and a second elastomeric seal at a first connection point between an inductively coupled plasma source and the reactor;

providing a third elastomeric seal and a fourth elastomeric seal at a second connection point between the inductively coupled plasma source and a process gas source;

establishing a first volume defined between the first elastomeric seal and second elastomeric seal;

establishing a second volume defined between the third elastomeric seal and the fourth elastomeric seal;

with a least one of the first elastomeric seal, the second elastomeric seal, the third elastomeric seal, and the fourth elastomeric seal establishing a surface contact with at least three different components of the apparatus for atomic scale processing;

applying a vacuum to the first volume, or actively purging and/or backfilling the first volume with a process gas, to lower an atmospheric partial pressure within the first volume; and

applying a vacuum to the second volume, or actively purging and/or backfilling the second volume with a process gas, to lower an atmospheric partial pressure within the second volume.

12. The method of claim 11 , further comprising providing a cooling arrangement in the inductively coupled plasma source which provides active cooling to prevent thermal damage to the elastomeric seals at the first and second connection points.

13. The method of claim 12 , wherein the cooling arrangement comprises one or more heat sinks.

14. The method of claim 12 , wherein the cooling arrangement comprises one or more water-cooled base plates.

15. The method of claim 12 , wherein the cooling arrangement comprises one or more water-cooled mounting flanges.

16. The method of claim 12 , wherein the cooling arrangement comprises a cooling fan.

17. The method of claim 12 , wherein the cooling arrangement comprises one or more water-cooled enclosure panels.

18. The method of claim 11 , wherein the inductively coupled plasma source comprises a dielectric tube, wherein the dielectric tube comprises fused silica, ceramic alumina, sapphire, or a combination thereof to substantially eliminate etching of the dielectric tube surface.

19. The method of claim 11 , wherein a partial pressure of each background impurity within the internal volume of the reactor is below approximately 10 −6 Torr.

20. The method of claim 11 , further comprising maintaining a continuous, inactive gas flow from the process gas source to the ICP source and the reactor.