Substrate pedestal including backside gas-delivery tube
In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.
1. A substrate pedestal, comprising:
a platen comprising a ceramic material and having an upper surface configured to support a substrate during processing;
a stem comprising a ceramic material and having an upper-stem flange upon which the platen is mechanically coupled, the stem having an interior portion; and
a backside gas-delivery tube comprising a ceramic material, the backside gas-delivery tube being located in the interior portion of the stem, the backside gas-delivery tube including an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange, the backside gas-delivery tube being configured to be in fluid communication with at least one backside-gas passage of the platen, the backside gas-delivery tube being configured to supply a backside gas to a region below and in fluidic contact with at least a central portion of a lower surface of the substrate during processing.
2. The substrate pedestal of claim 1 , wherein the backside gas-delivery tube further includes at least one opening in the upper gas-tube flange such that at least one electrical connection can extend through the upper gas-tube flange.
3. The substrate pedestal of claim 2 , wherein the at least one opening in the backside gas-delivery tube includes a plurality of openings in the upper gas-tube flange such that the at least one electrical connection includes a plurality of respective electrical connections that extend through the upper gas-tube flange to an electrostatic clamping electrode and a heater in the platen.
4. The substrate pedestal of claim 1 , further comprising a mesa pattern formed on the upper surface of the platen upon which the substrate is supported during processing, the mesa pattern being configured to form gas passages between mesas of the mesa pattern and a lower surface of the substrate supported on the mesa pattern.
5. The substrate pedestal of claim 1 , wherein there is no gap between the upper surface of the upper gas-tube flange and the lower surface of the platen.
6. The substrate pedestal of claim 1 , wherein a gap is formed between a portion of the upper gas-tube flange and the lower surface of the platen.
7. The substrate pedestal of claim 1 , wherein a contact area between the upper surface of the upper gas-tube flange and the lower surface of the platen is about equal to the contact area between the lower surface of the upper gas-tube flange and the upper surface of the upper-stem flange.
8. The substrate pedestal of claim 1 , further comprising a vacuum seal being formed between the interior portion of the stem and a vacuum chamber in which the substrate pedestal operates.
9. The substrate pedestal of claim 1 , wherein at least one component selected from components including the backside gas-delivery tube, the platen, and the stem comprises aluminum nitride.
10. The substrate pedestal of claim 1 , wherein the backside gas-delivery tube is centrally located in the interior portion of the stem.
11. The substrate pedestal of claim 1 , wherein the backside gas-delivery tube is located off-center in the interior portion of the stem.
12. The substrate pedestal of claim 1 , further comprising:
at least one electrostatic clamping electrode embedded in the platen;
a lower radio-frequency (RF) electrode embedded in the platen; and
at least one heater embedded in the platen.
13. The substrate pedestal of claim 1 , further comprising a single electrode embedded therein that is operable to serve as an electrostatic clamping electrode and a radio-frequency (RF) electrode.
14. A substrate pedestal, comprising:
a platen comprising a ceramic material and having an upper surface configured to support a substrate during processing;
a stem comprising a ceramic material and having an upper-stem flange upon which the platen is mechanically coupled, the stem having an interior portion; and
a backside gas-delivery tube comprising a ceramic material, the backside gas-delivery tube being is located in the interior portion of the stem, the backside gas-delivery tube including an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange, the backside gas-delivery tube being configured to be in fluid communication with at least one backside-gas passage of the platen, the backside gas-delivery tube being configured to supply a backside gas to a region below and in fluidic contact with at least a central portion of a lower surface of the substrate during processing, the backside gas-delivery tube further including a plurality of openings in the upper gas-tube flange having a plurality of respective electrical connections that extend through the upper gas-tube flange.
15. The substrate pedestal of claim 14 , wherein at least some of the plurality of respective electrical connections are electrically coupled to an electrostatic clamping electrode in the platen and a heater in the platen.
16. The substrate pedestal of claim 14 , wherein at least one component selected from components including the backside gas-delivery tube, the platen, and the stem comprises aluminum nitride.