Semiconductor memory device and method for operating thereof
Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.
1. A semiconductor device mountable in a Ball Grid Array (BGA) package type and configurable to communicate with a memory controller, the semiconductor device comprising:
a memory block including a plurality of memory cells, the plurality of memory cells being coupled to a plurality of bit lines in a first direction, the memory cells coupled to each of the plurality of bit lines being stacked vertically on a semiconductor substrate in a second direction which is substantially perpendicular to the first direction;
a peripheral circuit coupled to the memory block and located in a different area compared to the memory block in the second direction,
wherein the peripheral circuit is configurable to control at least one operation of a program operation, a read operation and an erase operation on the memory block, and includes a read and write circuit including a plurality of page buffers,
wherein the plurality of page buffers are coupled to the memory block via the plurality of bit lines and are configurable to sense data of the plurality of memory cells during the at least one operation via the plurality of bit lines,
wherein the plurality of page buffers are grouped into a plurality of page buffer groups and each of the plurality of page buffer groups is coupled to a plurality of sensing lines respectively, and
wherein at least two page buffers of each of the plurality of page buffer groups are configurable to simultaneously sense data of a target memory cells through bit lines connected to the target memory cells and output the sensed data via the plurality of sensing lines.
2. The semiconductor device according to claim 1 , wherein the peripheral circuit further includes a read and write control circuit configured to generate a plurality of page buffer control signals, and
wherein each of the plurality of page buffers includes a plurality of latches configured to operate in response to the plurality of page buffer control signals.
3. The semiconductor device according to claim 2 , wherein the plurality of page buffers are grouped into a plurality of check groups, and
wherein each of the plurality of check groups is configured to commonly receives at least one of the plurality of page buffer control signals.
4. The semiconductor device according to claim 2 , wherein the plurality of page buffer control signals include output control signals of the sensed data to the plurality of sensing lines, and
wherein the output control signals are separately coupled to each of the plurality of page buffers.
5. The semiconductor device according to claim 1 , wherein the peripheral circuit further includes a current sensing circuit configured to compare the sensed data received via the plurality of sensing lines with a reference voltage.
6. The semiconductor device according to claim 5 , wherein the reference voltage is generated by a reference current, which is related to an allowable number of bit.
7. The semiconductor device according to claim 5 , wherein the peripheral circuit further includes a voltage generator configured to generate a plurality of voltages having various voltage level by selectively activating a plurality of pumping capacitors.
8. The semiconductor device according to claim 7 , wherein the plurality of voltages applied to the target cells are generated according to the at least one operation.
9. The semiconductor device according to claim 8 , the plurality of voltages to be applied to the target cells are adjustable based on the comparison of the current sensing circuit.
10. The semiconductor device according to claim 1 , wherein each of the plurality of page buffer groups includes eight page buffers, and
wherein the eight page buffers share one of the plurality of sensing lines.
11. The semiconductor device according to claim 10 , wherein a number of the at least two page buffers of each of the plurality of page buffer groups is one of two, four or eight.
12. The semiconductor device according to claim 1 , wherein the plurality of memory cells includes dummy memory cells and a predetermined voltage is applied to at least one of the dummy memory cells before or after the at least one operation.
13. The semiconductor device according to claim 1 , wherein the memory block includes even-number-th cell strings coupled to respective even bit lines and odd-number-th cell strings coupled to respective odd bit lines.
14. A semiconductor device mountable in a Ball Grid Array (BGA) package type and configurable to communicate with a memory controller, the semiconductor device comprising:
a memory block including a plurality of memory cells, the plurality of memory cells being coupled to a plurality of bit lines in a first direction, the memory cells coupled to each of the plurality of bit lines being stacked vertically on a semiconductor substrate in a second direction which is substantially perpendicular to the first direction;
a peripheral circuit coupled to the memory block and located in a different area compared to the memory block in the second direction,
wherein the peripheral circuit is configurable to control at least one operation of a program operation, a read operation and an erase operation on the memory block and includes a read and write circuit having a plurality of page buffers,
wherein the plurality of page buffers are coupled to the memory block via the plurality of bit lines and are configurable to sense data of the plurality of memory cells during the at least one operation via the plurality of bit lines,
wherein the plurality of page buffers are grouped into a plurality of page buffer groups and each of the plurality of page buffer groups is coupled to a plurality of sensing lines respectively,
wherein the peripheral circuit includes a page buffer control circuit configured to generate a plurality of page buffer control signals,
wherein the page buffer control circuit is configured to enable sensing operation of a target memory cells through bit lines connected to the target memory cells,
wherein the page buffer control circuit is configured to enable first set of page buffers and to disable second set of page buffers for a first time period corresponding to the at least one operation and is further configured to enable second set of page buffers and to disable first set of page buffers for a second time period corresponding to the at least one operation, and
wherein each of the first set and the second set includes at least two page buffers from each of the plurality of page buffer groups.
15. The semiconductor device according to claim 14 , wherein the first set of page buffers is configured to simultaneously receive at least first one of the plurality of page buffer control signals and the second set of page buffers is configured to simultaneously receive at least second one of the plurality of page buffer control signals.
16. The semiconductor device according to claim 14 , wherein the each of the page buffer includes at least three latches comprising cross-coupled inverters, and
wherein the latches are turned on or off in response to the plurality of page buffer control signals.