Semiconductor device and semiconductor device manufacturing method
A semiconductor device, including a metal base plate having a front surface on which a disposition area is set apart from a central portion of the metal base plate, and a board placed over the disposition area with a solder therebetween. The solder has two edge portions of which one is closer than the other to the central portion of the metal base plate, said one being thicker than said the other.
1. A semiconductor device, comprising:
a metal base plate having a front surface on which a disposition area is set apart from a central portion of the metal base plate; and
a board placed over the disposition area with a solder therebetween, the solder having two edge portions, opposed to each other with respect to the central portion, of which one is farther than the other to the central portion of the metal base plate, said one being thicker than said the other, wherein
the board has two edge portions, opposed to each other with respect to the central portion, of which one is farther than the other to the central portion of the metal base plate, the board being inclined so that the one edge portion thereof being higher than the other edge portion thereof in a side view of the semiconductor device.
2. The semiconductor device according to claim 1 , wherein the central portion of the metal base plate is convexly warped to protrude to a side opposite to the front surface.
3. The semiconductor device according to claim 1 , further comprising:
a first protrusion formed at a first formation position on the disposition area, and
a second protrusion formed at a second formation position on the disposition area, the second formation position being farther from the central portion than the first formation position.
4. A semiconductor device comprising:
a metal base plate having a front surface on which a disposition area is set apart from a central portion of the metal base plate;
a board placed over the disposition area with a solder therebetween, the solder having two edge portions of which one is farther than the other to the central portion of the metal base plate, said one being thicker than said the other;
a first protrusion formed at a first formation position on the disposition area; and
a second protrusion formed at a second formation position on the disposition area, the second formation position being farther from the central portion than the first formation position, wherein:
the first protrusion is in contact with a back surface of the board; and
the second protrusion is longer than the first protrusion, and is in contact with the back surface of the board.
5. The semiconductor device according to claim 1 , wherein:
the disposition area is provided in plurality;
the disposition areas set on the metal base plate are symmetrical with respect to the central portion of the metal base plate;
the board is provided in plurality; and
the boards are respectively placed over the disposition areas.
6. The semiconductor device according to claim 1 , wherein:
the disposition area is provided in plurality;
the board is provided in plurality;
the solder is provided in plurality;
the disposition areas are set on the metal base plate in a determined direction;
the boards are placed over the disposition areas with the solders therebetween, respectively; and
the solder in each outmost disposition area of the disposition areas has two end portions, of which one is farther than the other from the central portion of the metal base plate in the determined direction, said one being thicker than said the other.