Thermally and electrically conductive interconnects
Processing forms an integrated circuit structure having first and second layers on opposite sides of an insulator, and an interconnect structure extending through the insulator between the first layer and the second layer. The interconnect structure is formed in an opening extending through the insulator between the first layer and the second layer and has an electrical conductor in the opening extending between the first layer and the second layer and a thermally conductive electrical insulator liner along sidewalls of the opening extending between the first layer and the second layer. The electrical conductor is positioned to conduct electrical signals between the first layer and the second layer, and the thermally conductive electrical insulator liner is positioned to transfer heat between the first layer and the second layer.
1. An integrated circuit structure comprising:
an interconnect structure comprising an electrical conductor in an opening of an insulator, wherein the electrical conductor comprises a metal and electrically connects a first layer and a second layer on opposite sides of the insulator; and
a thermally conductive electrical insulator liner along sidewalls of the opening and immediately adjacent to the electrical conductor.
2. The integrated circuit structure in claim 1 , wherein the thermally conductive electrical insulator liner and the electrical conductor fill the opening, and wherein the thermally conductive electrical insulator liner contacts and is between the electrical conductor and the insulator.
3. The integrated circuit structure in claim 1 , wherein the thermally conductive electrical insulator liner occupies at least 20% of a volume of the opening.
4. The integrated circuit structure of claim 1 , further comprising a shallow trench isolation (STI) structure contacting the insulator, wherein the thermally conductive electrical insulator liner contacts and is positioned between the electrical conductor and the STI structure.
5. The integrated circuit structure of claim 1 , wherein the interconnect structure comprises at least one of:
a through silicon via (TSV);
an electronically conductive wire;
an external contact;
an internal contact; and
an inter-layer electrical via.
6. The integrated circuit structure in claim 1 , wherein the opening comprises one of a linear and circular opening.
7. The integrated circuit structure in claim 1 , wherein the thermally conductive electrical insulator liner comprises diamond, and wherein the electrical conductor comprises at least one of copper, tungsten, aluminum, and tin.
8. An integrated circuit structure comprising:
an insulator layer;
a first layer and a second layer on opposite sides of the insulator layer;
an interconnect structure extending through the insulator layer between the first layer and the second layer,
wherein the interconnect structure is in an opening extending through the insulator layer between the first layer and the second layer and comprises:
an electrical conductor in the opening extending between the first layer and the second layer; and
a thermally conductive electrical insulator liner along sidewalls of the opening extending between the first layer and the second layer,
wherein the electrical conductor is positioned to conduct electrical signals between the first layer and the second layer, and
wherein the thermally conductive electrical insulator liner is positioned to transfer heat between the first layer and the second layer; and
a shallow trench isolation (STI) structure contacting the insulator layer, wherein the thermally conductive electrical insulator liner contacts and is positioned between the electrical conductor and the STI structure.
9. The integrated circuit structure in claim 8 , wherein the thermally conductive electrical insulator liner and the electrical conductor fill the opening, and wherein the thermally conductive electrical insulator liner contacts and is between the electrical conductor and the insulator layer.
10. The integrated circuit structure in claim 8 , wherein the thermally conductive electrical insulator liner occupies at least 20% of a volume of the opening.
11. The integrated circuit structure in claim 8 , further comprising a-a semiconductor substrate, wherein the interconnect structure extends through the STI structure and the semiconductor substrate to a conductor layer on a bottom surface of the semiconductor substrate.
12. The integrated circuit structure in claim 8 , wherein the interconnect structure comprises a through silicon via (TSV).
13. The integrated circuit structure in claim 8 , wherein the opening comprises one of a linear and circular opening.
14. The integrated circuit structure in claim 8 , wherein the thermally conductive electrical insulator liner comprises diamond, and wherein the electrical conductor comprises at least one of copper, tungsten, aluminum, and tin.