Semiconductor device and manufacturing method thereof
A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.
1. A semiconductor device comprising:
a substrate;
a stacked body provided on the substrate; and
a first pillar portion and a second pillar portion penetrating the stacked body, wherein
the first pillar portion is a memory pillar,
the second pillar portion comprises a first film including a first material and a second material, and a second film provided on an inner side of the first film,
the second material is a material that increases an etching rate of the first material as a composition rate relative to the first material increases, and the composition rate decreases from an upper part to a lower part of the first film,
the second pillar portion separates the stacked body into a plurality of blocks,
the first film is formed in a structure having a V-shaped section of the second pillar portion, and
the second pillar portion further comprises an insulation film provided on an outer side of the first film, and the insulation film is formed in a structure including a first part having the V-shaped section and a second part having a section that is angled towards a center of the second pillar.
2. The semiconductor device according to claim 1 , wherein the first material is silicon, and the second material is germanium.
3. The semiconductor device according to claim 1 , wherein
the stacked body comprises a plurality of electrode layers, and a plurality of insulating layers alternately stacked with the plurality of electrode layers; and
the first pillar portion further comprises a memory film facing the plurality of electrode layers, and a semiconductor film provided between the memory film and the first film.
4. The semiconductor device according to claim 1 , wherein the first film and the second film are electrically conducting films.
5. The semiconductor device according to claim 1 , wherein the first film and the second film are insulation films.
6. The semiconductor device according to claim 1 , wherein the memory pillar comprises a core insulation film provided in a center of the memory pillar, and an insulation film provided in a lower portion of an outer peripheral portion of the core insulation film, and the insulation film includes germanium.