Carrier-containing metal foil and method for manufacturing millimeter-wave antenna substrate using same
Provided is a carrier-attached metal foil which has excellent carrier-releasability and excellent selective metal layer-etchability, and can achieve a reduction in transmission loss and resistance in a semiconductor package (for example, a millimeter-wave antenna substrate) manufactured using the same. The carrier-attached metal foil includes: (a) a carrier; (b) a release functional layer on the carrier and including (b1) an adhesion layer disposed closer to the carrier and having a thickness of more than 10 nm and less than 200 nm and (b2) a release assistance layer disposed farther from the carrier and having a thickness of 50 nm or more and 500 nm or less; and (c) a composite metal layer on the release functional layer and including (c1) a carbon layer disposed closer to the release assistance layer, and (c2) a first metal layer disposed farther from the release assistance layer and mainly composed of Au or Pt.
1. A carrier-attached metal foil comprising:
(a) a carrier;
(b) a release functional layer provided on the carrier, the release functional layer including:
(b1) an adhesion layer disposed closer to the carrier and having a thickness of more than 10 nm and less than 200 nm; and
(b2) a release assistance layer disposed farther from the carrier and having a thickness of 50 nm or more and 500 nm or less; and
(c) a composite metal layer provided on the release functional layer, the composite metal layer including:
(c1) a carbon layer disposed closer to the release assistance layer; and
(c2) a first metal layer disposed farther from the release assistance layer and mainly composed of Au or Pt.
2. The carrier-attached metal foil according to claim 1 , wherein the career is composed of glass, silicon, or a ceramic.
3. The carrier-attached metal foil according to claim 1 , wherein the release functional layer includes at least one layer containing 80 atom % or more of at least one selected from the group consisting of Cu, Ti, Ta, Cr, Ni, Al, Mo, Zn, W, TiN, and TaN as the adhesion layer and/or the release assistance layer.
4. The carrier-attached metal foil according to claim 1 , wherein a ratio T 2 /T 1 of a thickness T 2 of the release assistance layer to a thickness T 1 of the adhesion layer is more than 1 and 20 or less.
5. The carrier-attached metal foil according to claim 1 , wherein the carbon layer contains amorphous carbon.
6. The carrier-attached metal foil according to claim 1 , wherein the first metal layer has a thickness of 50 nm or more and 2000 nm or less.
7. The carrier-attached metal foil according to claim 1 , wherein the composite metal layer further includes:
(c3) a second metal layer provided between the carbon layer and the first metal layer and containing 50 atom % or more of at least one selected from the group consisting of Ti Ni, W, Cr, and Pd.
8. The carrier-attached metal foil according to claim 7 , wherein the second metal layer has a thickness of 50 nm or more and 1000 nm or less.
9. The carrier-attached metal foil according to claim 1 , wherein the composite metal layer further includes:
(c4) a barrier layer provided on a surface of the first metal layer disposed farther from the carbon layer, and containing a total of 50 atom % or more of at least one selected frot the group consisting of Ti, Ta Ni, W, Cr, and Pd.
10. The carrier-attached metal foil according to claim 1 , wherein the carrier-attached metal foil is used for manufacture of a millimeter-wave antenna substrate.
11. A method for manufacturing a millimeter-wave antenna substrate, comprising manufacturing the millimeter-wave antenna substrate using the carrier-attached metal foil according to claim 1 .