IP Library Granted Patent US 11,638,470
Granted Patent B2
US 11,638,470 · App. 17/147,266 · Granted May 2, 2023

Gallium nitride gemstones

Inventor: Arash Kani (Easton, CT)
A44C17/007
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Quick Facts
Patent No.
US 11,638,470
App. No.
17/147,266
Granted
May 2, 2023
Kind
B2
Abstract

Different types of gallium nitride (GaN) gemstones can be produced synthetically for crafting jewelry. With some examples, a GaN gemstone can include a crystal (such as a single crystal that is typically used in semiconductor devices or other types of electronic components, e.g., electronic components with optical properties). The crystal of the gemstone can be grown to be relatively pure and translucent GaN as well as cut and polished to have facets of a gemstone. Also, the crystal can include doped GaN—such as GaN doped with indium or aluminum. The doping of the GaN can be to an extent to produce a visibly discernable color (such a tint of blue).

Claims (20)

1. A gemstone, comprising a crystal that comprises synthetic gallium nitride and polished faces, wherein the polished faces are polished to an extent to let visible light pass through the faces, and wherein the visible light comprises electromagnetic radiation with wavelengths ranging from 380 to 750 nanometers.

2. The gemstone of claim 1 , wherein the crystal is monocrystalline.

3. The gemstone of claim 1 , wherein the polished faces are polished to an extent to let the visible light enter into the gemstone, reflect from inside the gemstone, and exit the gemstone.

4. The gemstone of claim 1 , wherein the crystal comprises indium.

5. The gemstone of claim 1 , wherein the crystal comprises aluminum.

6. The gemstone of claim 1 , wherein the synthetic gallium nitride is intrinsic gallium nitride.

7. The gemstone of claim 1 , wherein the crystal comprises a hexagonal crystal structure.

8. The gemstone of claim 1 , wherein the crystal comprises a cubic crystal structure.

9. The gemstone of claim 1 , wherein the crystal is colorless.

10. The gemstone of claim 1 , wherein the faces are configured according to a diamond cut.

11. The gemstone of claim 10 , wherein the diamond cut is a brilliant cut.

12. The gemstone of claim 10 , wherein the diamond cut is a modified brilliant cut, a step cut, a mixed cut, a rose cut, a mogul cut, or any other known gemstone cut.

13. The gemstone of claim 1 , wherein the crystal comprises a dopant of atoms at a concentration sufficient to produce a visibly discernable color.

14. The gemstone of claim 13 , wherein the dopant comprises aluminum atoms.

15. The gemstone of claim 13 , wherein the dopant comprises indium atoms.

16. A synthetic gemstone, comprising a crystal that comprises gallium nitride and polished faces, wherein the polished faces are polished to an extent to let visible light to pass through the faces, and wherein the visible light comprises electromagnetic radiation with wavelengths ranging from 380 to 750 nanometers.

17. The synthetic gemstone of claim 16 , wherein the crystal is monocrystalline, and wherein the polished faces are polished to an extent to let the visible light enter into the gemstone, reflect from inside the gemstone, and exit the gemstone.

18. The synthetic gemstone of claim 17 , wherein the gallium nitride is extrinsic gallium nitride and wherein the crystal comprises either indium or aluminum added to the crystal intentionally.

19. The synthetic gemstone of claim 17 , wherein the gallium nitride is intrinsic gallium nitride.

20. A gemstone, comprising a crystal that comprises gallium nitride or synthetic gallium nitride and polished faces, wherein the polished faces are polished to an extent to let visible light pass through the polished faces, wherein the visible light comprises electromagnetic radiation with wavelengths ranging from 380 to 750 nanometers, and wherein the gemstone further comprises a diamond cut and the diamond cut comprises a brilliant cut, a modified brilliant cut, a step cut, a mixed cut, a rose cut, a mogul cut, or any other type of diamond cut.

Continuity (1)
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