Cadmium free quantum dot including lithium, production method thereof, and electronic device including the same

1. A cadmium free quantum dot comprising:

zinc, tellurium, and selenium, and

lithium,

wherein a full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to 35 nanometers,

wherein the cadmium free quantum dot has a quantum efficiency of greater than or equal to about 5%, and

wherein the maximum luminescent peak of the cadmium free quantum dot is present in a wavelength range of greater than about 470 nanometers.

2. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot comprises a semiconductor nanocrystal core comprising zinc, selenium, and tellurium and a shell disposed on the semiconductor nanocrystal core, and wherein the cadmium free quantum dot does not comprise an indium phosphide.

3. The cadmium free quantum dot of claim 1 , wherein an ultraviolet-visible absorption spectrum of the cadmium free quantum dot does not have a valley in a range of from about 400 nanometers to about a wavelength of a first absorption peak.

4. The cadmium free quantum dot of claim 1 , wherein a molar ratio of tellurium with respect to selenium is greater than about 0.05:1.

5. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot comprises ZnTe x Se 1-x , wherein x is greater than or equal to about 0.5 and less than or equal to about 0.9.

6. The cadmium free quantum dot of claim 1 , wherein the amount of the lithium is greater than or equal to about 0.15 moles with respect to 1 mole of tellurium.

7. The cadmium free quantum dot of claim 1 , wherein the full width at half maximum of the maximum photoluminescent peak is less than or equal to 34 nanometers.

8. A cadmium free quantum dot comprising

zinc, tellurium, and selenium, and

lithium,

wherein a full width at half maximum of a maximum photoluminescent peak of the cadmium fee quantum dot is less than or equal to about 30 nanometers, and

wherein the quantum dot has a quantum efficiency of greater than or equal to about 10%.

9. The cadmium free quantum dot of claim 8 , wherein the cadmium free quantum dot comprises

a core comprising a first semiconductor nanocrystal material and

a semiconductor nanocrystal shell disposed on the core,

wherein the core comprises ZnTe x Se 1-x , wherein x is greater than or equal to about 0.5 and less than or equal to about 0.9, and the semiconductor nanocrystal shell comprises ZnSe, ZnS, ZnSeS, or a combination thereof.

10. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot does not comprise manganese, copper, or a combination thereof.

11. A cadmium free quantum dot comprising:

zinc, tellurium, and selenium, and

lithium,

wherein a full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers,

wherein the cadmium free quantum dot has a quantum efficiency of greater than or equal to about 1%,

wherein the cadmium free quantum dot comprises

a core comprising a first semiconductor nanocrystal material and

a semiconductor nanocrystal shell disposed on the core,

wherein the core comprises ZnTe x Se 1-x , wherein x is greater than or equal to about 0.5 and less than or equal to about 0.9, and the semiconductor nanocrystal shell comprises ZnSe, ZnS, ZnSeS, or a combination thereof, and

wherein the cadmium free quantum dot does not comprise a Group III-V compound.

12. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot has a Zinc Blende crystalline structure as determined by an X-ray diffraction spectroscopy analysis.

13. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot is water-insoluble.

14. A method of producing a cadmium free quantum dot of claim 1 , which comprises:

preparing a zinc precursor organic solution comprising a zinc precursor and a first organic ligand in an organic solvent; and

while heating the zinc precursor organic solution at a first reaction temperature, adding to the zinc precursor organic solution a selenium precursor, a tellurium precursor, a lithium compound, and a second organic ligand to produce the cadmium free quantum dot.

15. The method of claim 14 , wherein the first reaction temperature is greater than or equal to about 280° C.

16. The method of claim 14 , further comprising

mixing the selenium precursor, the tellurium precursor, the lithium compound, and the second organic ligand to form a mixed solution at a temperature of less than about 80° C., and

adding the mixed solution to the zinc precursor organic solution.

17. A quantum dot polymer composite comprising

a polymer matrix; and

a plurality of quantum dots dispersed in the polymer matrix,

wherein the plurality of quantum dots comprises the cadmium free quantum dot of claim 1 .

18. The quantum dot polymer composite of claim 17 , wherein the polymer matrix comprises a polymerization product of a photopolymerizable monomer including a carbon-carbon double bond, a polymerization product of the photopolymerizable monomer and a multi-functional thiol compound having at least two thiol groups, a binder polymer having a carboxylic acid group, or a combination thereof.

19. A display device comprising

a light emitting element,

wherein the light emitting element comprises a cadmium free quantum dot of claim 1 .

20. The display device of claim 19 , wherein the display device comprises a light source that is configured to provide incident light to the light emitting element.

21. The display device of claim 19 , wherein the light emitting element comprises a stacked structure comprising a substrate and a patterned light emitting layer disposed on the substrate, wherein the patterned light emitting layer comprises a repeating section configured to emit light at a predetermined wavelength, and wherein the first repeating section comprises the cadmium free quantum dots.