High-refractive-index hydrogenated silicon film and methods for preparing the same
A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
1. A preparation method for an oxygen-containing hydrogenated silicon film, comprising:
(a) placing a base body that is cleaned on a rotation mechanism of a vacuum sputtering reaction film coating machine, with a film coating face facing a sputter source, the rotation mechanism rotating at a constant speed in a film coating chamber; and
when a vacuum degree inside the film coating chamber is higher than 10 −3 Pa, starting the sputter source to work at a power 0.75-12 KW and introducing argon to deposit Si on the base body by MF magnetron Si target sputtering from the sputter source, forming a silicon film;
(b) driving, along with the rotation of the rotation mechanism, the base body to a reaction source area; and starting the reaction source to work at a power of 0.5-8 KW and introducing and activating a mixture of hydrogen gas, oxygen gas, and an inert gas through RF or ICP to form plasmas consisting of hydrogen-oxygen-argon, and reacting the silicon film obtained from step (a) with the plasmas to form the oxygen-containing hydrogenated silicon film, wherein the inert gas is argon, and wherein an amount of active oxygen is 4-30% of a total amount of active hydrogen and the active oxygen by volume; and
(c) annealing the oxygen-containing hydrogenated silicon film obtained from step (b) in an annealing furnace at 100-300° C. for 60-180 minutes,
wherein the oxygen-containing hydrogenated silicon film has a refractive index of 1.46-3.7 and an extinction coefficient of less than 0.0001 over a wavelength range of 800-1100 nm after step (c).
2. The preparation method according to claim 1 ,
wherein the amount of the active oxygen in step (b) accounts for 5-20% of the total amount of the active hydrogen and the active oxygen.
3. The preparation method according to claim 1 , wherein the rotation mechanism is one selected from a turn plate, a drum, and a rotating stand.
4. The preparation method according to claim 1 , wherein the film coating chamber is provided with a baffle configured to divide the film coating chamber into a first chamber, in which the sputter source is located, and a second chamber, in which the reaction source is located.
5. The preparation method according to claim 1 , wherein
the film coating chamber is provided with a gas mixing chamber, hydrogen, oxygen, and argon are respectively introduced to the gas mixing chamber, and after being mixed well, the mixed gas is introduced to the film coating chamber to be activated; or,
the mixture of hydrogen gas, oxygen gas, and the inert gas is respectively introduced to the gas mixing chamber, and after being mixed well, the mixed gas is introduced to the film coating chamber to be activated.
6. The preparation method according to claim 1 , further comprising:
heating the base body to a base body temperature of 100-300° C., and subsequently, introducing argon to bombard and clean the film coating chamber and the base body; and
shutting off the argon after the cleaning is completed, and vacuuming the film coating chamber again to a vacuum degree of higher than 10 −3 Pa;
wherein, the bombarding and cleaning lasts for 1-5 minutes, and a bombarding power is 0.5 KW-8 KW,
before starting the sputter source in step (a).