Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater
Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.
1. A semiconductor processing chamber, comprising: a substrate support comprising a support surface, wherein a peripheral edge region of the support surface is recessed relative to a medial region of the support surface; a pumping liner disposed about an exterior surface of the substrate support; a liner disposed between the substrate support and the pumping liner, wherein the liner is spaced apart from the exterior surface of the substrate support to define a purge lumen between the liner and the substrate support; wherein an inner surface of the liner comprises a protrusion that extends inward toward the exterior surface of the substrate support; a lateral distance between the exterior surface of the substrate support and the protrusion is between about 60 mils and 100 mils; and an edge ring seated on the peripheral edge region of the support surface, the edge ring extending beyond a peripheral edge of the substrate support and above at least a portion of the liner, wherein: a gap is formed between a bottom surface of the edge ring and a top surface of the liner; and the gap and the purge lumen are fluidly coupled with one another.
2. The semiconductor processing chamber of claim 1 , wherein:
one or both of an inner edge and an outer edge of the top surface of the liner are rounded.
3. The semiconductor processing chamber of claim 1 , wherein:
a top surface of the edge ring and a top surface of the medial region of the support surface of the substrate support are at a substantially same height when the substrate support is in a process position.
4. The semiconductor processing chamber of claim 1 , wherein:
the gap separates the bottom surface of the edge ring and the top surface of the liner by a vertical distance of between about 80 mils and 300 mils.
5. The semiconductor processing chamber of claim 1 , wherein:
a distal edge of the edge ring extends radially outward beyond at least half of a thickness of the liner.
6. The semiconductor processing chamber of claim 1 , wherein:
the top surface of the liner tapers downward in a direction of the pumping liner.
7. The semiconductor processing chamber of claim 1 , wherein:
the liner comprises a ceramic material.
8. A semiconductor processing chamber, comprising: a showerhead that at least partially defines a top of the chamber, the showerhead defining a plurality of apertures that extend through a thickness of the showerhead; a substrate support disposed beneath the showerhead, the substrate support comprising a support surface, wherein: a peripheral edge region of the support surface is recessed relative to a medial region of the support surface; and the substrate is vertically translatable within the chamber between a process position and a transfer position; a liner disposed laterally outward of and spaced apart from an exterior surface of the substrate support to define a purge lumen between the liner and the substrate support; wherein an inner surface of the liner comprises a protrusion that extends inward toward the exterior surface of the substrate support; a lateral distance between the exterior surface of the substrate support and the protrusion is between about 60 mils and 100 mils; and an edge ring seated on the peripheral edge region of the support surface when the substrate support is in the process position, the edge ring extending beyond a peripheral edge of the substrate support and above at least a portion of the liner, wherein: a gap is formed between a bottom surface of the edge ring and a top surface of the liner; and the gap and the purge lumen arc fluidly coupled with one another.
9. The semiconductor processing chamber of claim 8 , wherein:
the edge ring is seated on the top surface of the liner when the substrate support is in the transfer position.
10. The semiconductor processing chamber of claim 8 , wherein:
a top surface of the edge ring and a top surface of the medial region of the support surface of the substrate support are at a substantially same height when the substrate support is in the process position.
11. The semiconductor processing chamber of claim 8 , wherein:
the gap separates the bottom surface of the edge ring and the top surface of the liner by a vertical distance of between about 80 mils and 300 mils.
12. The semiconductor processing chamber of claim 8 , further comprising:
a pumping liner radially outward of the liner.
13. The semiconductor processing chamber of claim 8 , wherein:
one or both of an inner edge and an outer edge of the top surface of the liner are chamfered.
14. The semiconductor processing chamber of claim 8 , further comprising:
a purge gas source coupled with a bottom of the purge lumen.