Semiconductor device and method of manufacture
In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.
1. A method of manufacturing a semiconductor device, the method comprising:
exposing a source/drain region through a first dielectric layer and a second dielectric layer, the source/drain region being located at least partially within a semiconductor fin;
implanting dopants into the second dielectric layer;
after the implanting the dopants, recessing the second dielectric layer beneath the first dielectric layer; and
forming a silicide region on the source/drain region, wherein after the forming the silicide region the silicide region is located between the source/drain region and the first dielectric layer in a direction perpendicular to semiconductor fin.
2. The method of claim 1 , wherein the recessing the second dielectric layer is performed using a wet etching process.
3. The method of claim 2 , wherein the wet etching process utilizes hydrofluoric acid.
4. The method of claim 1 , wherein the implanting the dopants into the second dielectric layer also implants the dopants into the first dielectric layer.
5. The method of claim 1 , wherein the implanting the dopants is performed as a tilted implant.
6. The method of claim 1 , wherein the implanting the dopants implants germanium.
7. The method of claim 1 , wherein the second dielectric layer has an extension protruding from a sidewall of the first dielectric layer.
8. A method of manufacturing a semiconductor device, the method comprising:
etching a first dielectric material to form a first opening;
etching a second dielectric material to extend the first opening through the second dielectric material, wherein the first opening has a first width through the first dielectric material and a second width less than the first width through the second dielectric material;
recessing the second dielectric material from a sidewall of the first dielectric material to form a recess;
forming a silicide within the recess and within the first opening; and
filling a remainder of the first opening with a conductive material.
9. The method of claim 8 , wherein the recessing the second dielectric material comprises implanting a first dopant into the second dielectric material.
10. The method of claim 9 , wherein the first dopant comprises germanium.
11. The method of claim 10 , wherein the recessing the second dielectric material further comprises applying a wet etchant to the second dielectric material after the implanting the first dopant.
12. The method of claim 11 , wherein the wet etchant comprises hydrofluoric acid.
13. The method of claim 9 , wherein the implanting the first dopant also implants the first dopant into the first dielectric material.
14. The method of claim 9 , wherein the implanting the first dopant is performed as a tilted implant.
15. A semiconductor device comprising:
a source/drain region located within a semiconductor fin;
a first dielectric material over the semiconductor fin;
a contact etch stop layer located between the first dielectric material and the semiconductor fin; and
a conductive contact extending through the first dielectric material to make physical contact with a silicide region over the source/drain region, wherein the silicide region has a first width and the conductive contact has a second width adjacent to the silicide region less than the first width, wherein the first dielectric material has a first implantation region located along a sidewall of the first dielectric material adjacent to the conductive contact.
16. The semiconductor device of claim 15 , wherein the contact etch stop layer has a second implantation region located along a sidewall of the contact etch stop layer.
17. The semiconductor device of claim 16 , further comprising a third implantation region located within the source/drain region, the third implantation region, the second implantation region, and the first implantation region comprise the same dopant.
18. The semiconductor device of claim 15 , wherein the silicide region extends beneath the first dielectric material a distance of between about 0.5 nm and about 3 nm.
19. The semiconductor device of claim 15 , wherein the second width is between about 20 nm and about 45 nm.
20. The semiconductor device of claim 15 , wherein the first implantation region comprises boron.