IP Library › Granted Patent US 11,647,660
Granted Patent B2
US 11,647,660 · App. 16/627,357 · Granted May 9, 2023

Color filter substrate and fabricating method thereof

Inventor: Liangfen Zhang (Shenzhen, CN)
Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
H01L27/322G02B5/201H01L51/5284H01L51/56
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Quick Facts
Patent No.
US 11,647,660
App. No.
16/627,357
Granted
May 9, 2023
Kind
B2
Abstract

A color filter substrate and a fabricating method thereof are provided. The color filter substrate has a pixel definition layer having a first pixel-defining structure and a second pixel-defining structure, and the second pixel-defining structure encapsulates the first pixel-defining structure. The pixel definition layer enhances its structural support strength while ensuring its own shading property and hydrophobicity, so that it can reach a target height, and an undercut phenomenon is less likely to occur.

Claims (22)

1. A color filter substrate, comprising:

a pixel definition layer comprising a first pixel-defining structure and a second pixel-defining structure, wherein the second pixel-defining structure encapsulates the first pixel-defining structure, and a material used for the second pixel-defining structure is a light-shielding hydrophobic material;

a substrate;

a black matrix disposed on the substrate, wherein a plurality of first openings are provided in the black matrix;

a color pixel layer disposed on the substrate and disposed in the plurality of first openings; and

a transparent protective layer covering a surface of the color pixel layer away from the substrate and covering a surface of the black matrix away from the substrate;

wherein a plurality of second openings are disposed in the pixel definition layer, the color filter substrate further comprises a quantum dot light-conversion layer disposed on the transparent protective layer in the second openings, and the second pixel-defining structure covers a surface of the first pixel-defining structure adjacent to the quantum dot light-conversion layer.

2. The color filter substrate according to claim 1 , wherein the pixel definition layer is disposed on a surface of the transparent protective layer away from the color pixel layer, and the pixel definition layer corresponds to the black matrix.

3. The color filter substrate according to claim 1 , wherein the color pixel layer comprises a plurality of red sub-pixels, green sub-pixels, and blue sub-pixels, and the red sub-pixels, the green sub-pixels, and the blue sub-pixels are all evenly distributed on the substrate and filled in the first openings.

4. The color filter substrate according to claim 3 , wherein the second openings are positioned corresponding to the first openings.

5. The color filter substrate according to claim 4 , wherein the quantum dot light-conversion layer is provided in the second openings corresponding to the red sub-pixels and the green sub-pixels.

6. The color filter substrate according to claim 1 , wherein a material used for the first pixel-defining structure comprises one or more of silicon oxide, silicon nitride, and an organic material.

7. The color filter substrate according to claim 1 , wherein a cross-sectional shape of the pixel definition layer and a cross-sectional shape of the first pixel-defining structure are both trapezoidal.

8. The color filter substrate according to claim 1 , wherein a height of the pixel definition layer is greater than 6 um.

9. A method of fabricating a color filter substrate, comprising steps of:

providing a substrate;

forming a black matrix on the substrate;

forming a color pixel layer on the substrate;

forming a transparent protective layer on the black matrix and the color pixel layer, wherein the transparent protective layer covers a surface of the color pixel layer away from the substrate and covers a surface of the black matrix away from the substrate;

forming a first pixel-defining structure on the substrate;

forming a second pixel-defining structure on the first pixel-defining structure, wherein a material used for the second pixel-defining structure is a light-shielding hydrophobic material; and

forming a quantum dot light-conversion layer on the transparent protective layer, wherein the second pixel-defining structure covers a surface of the first pixel-defining structure adjacent to the quantum dot light-conversion layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2020
From: ZHANG, LIANGFEN
To: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
Reel/Frame 052020/0382 →
Priority Claims (1)
CN 201911118797.4 · Nov 15, 2019 · national
Continuity (1)
Related Publication 20210359008A1 · Nov 18, 2021