Deposition mask group, manufacturing method of electronic device, and electronic device
A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.
1. A manufacturing method of an electronic device comprising:
providing a deposition mask group comprising
a first deposition mask having two or more first through holes arranged along a first direction, and
a second deposition mask having two or more second through holes,
wherein the first through hole includes two or more mask first main areas arranged along a second direction intersecting the first direction and a mask first extension area extending to connect the two mask first main areas adjacent to each other in the second direction, the mask first extension area having a dimension smaller than the mask first main area in a direction orthogonal to the second direction, and
wherein the first through hole partly overlaps the second through hole when the first deposition mask and the second deposition mask are overlapped; and
a second-electrode forming step of forming a second electrode on an energizing layer on a first electrode on a substrate using the deposition mask group, the second-electrode forming step comprising
a step of forming a first layer of the second electrode by a deposition method using the first deposition mask, and
a step of forming a second layer of the second electrode by a deposition method using the second deposition mask.
2. The method of manufacturing an electronic device according to claim 1 , wherein at least one of the two or more mask first main areas is connected to another one of the mask first main areas via the second through hole when the first deposition mask and the second deposition mask are overlapped.
3. The method of manufacturing an electronic device according to claim 1 , wherein the mask first extension area entirely or partly overlaps the second through hole when the first deposition mask and the second deposition mask are overlapped.
4. The method of manufacturing an electronic device according to claim 3 , wherein the second through hole entirely or partly overlaps the two mask first main areas adjacent to each other in the second direction and the mask first extension area connected to the two mask first main areas when the first deposition mask and the second deposition mask are overlapped.
5. The method of manufacturing an electronic device according to claim 1 , wherein a dimension of the mask first extension area is 0.9 times or less a dimension of the mask first main area in a direction orthogonal to the second direction.
6. A manufacturing method of an electronic device comprising:
providing a deposition mask group comprising
a first deposition mask having two or more first through holes, and
a second deposition mask having two or more second through holes,
wherein the two or more first through holes include two or more mask first main areas arranged along a first direction and arranged along a second direction intersecting the first direction and two or more mask first auxiliary areas located between the two mask first main areas adjacent to each other in the second direction, the mask first auxiliary area having a dimension smaller than the mask first main area in the second direction,
wherein the two or more second through holes are arranged along the first direction and the second direction, and
wherein the mask first auxiliary area extends to partly overlap the two second through holes adjacent to each other in the first direction when the first deposition mask and the second deposition mask are overlapped;
a second-electrode forming step of forming a second electrode on an energizing layer on a first electrode on a substrate by using the deposition mask group, the second-electrode forming step comprising
a step of forming a first layer of the second electrode by a deposition method using the first deposition mask, and
a step of forming a second layer of the second electrode by a deposition method using the second deposition mask.
7. The method of manufacturing an electronic device according to claim 6 , wherein the second through hole extends to partly overlap the two mask first main areas adjacent to each other in the second direction when the first deposition mask and the second deposition mask are overlapped.
8. The method of manufacturing an electronic device according to claim 6 , wherein a dimension of the mask first auxiliary area is 0.9 times or less a dimension of the mask first main area in the second direction.