Target structure of physical vapor deposition

1. A target structure, comprising:

a body having a first side and an opposing second side;

a first sputtering target coupled to the first side of the body, the first sputtering target comprising a first material;

a second sputtering target coupled to the second side of the body, the second sputtering target comprising a second material;

a retention device comprising a first magnetic plate and a second magnetic plate, wherein the first magnetic plate is configured to maintain the first sputtering target in a fixed position with respect to the first side of the body and the second magnetic plate is configured to maintain the second sputtering target in a fixed position with respect to the second side of the body; and

a rotation mechanism coupled to the body, the rotation mechanism configured to rotate the body.

2. The target structure of claim 1 , wherein the first and second sputtering targets are magnetically coupled to the first and second magnetic plates.

3. The target structure of claim 1 , wherein the first material and the second material are different materials.

4. The target structure of claim 1 , wherein the first material comprises titanium nitride.

5. The target structure of claim 1 , wherein the second material comprises an aluminum copper alloy.

6. The target structure of claim 1 , wherein the rotation mechanism comprises at least one rotation shaft extending from the body.

7. The target structure of claim 6 , wherein the at least one rotation shaft comprises a first rotation shaft and a second rotation shaft aligned on a longitudinal axis extending through a center of the body.

8. The target structure of claim 1 , wherein each of the first side and the second side of the body include a recess sized and configured to respectively receive the first and second sputtering targets therein.

9. A physical vapor deposition (PVD) system, comprising:

a deposition chamber having a target receiving area and a work-piece receiving area; and

a double-sided sputtering target structure positioned within the target receiving area, the double-sided sputtering target structure comprising:

a body having a first side and an opposing second side;

a first sputtering target coupled to the first side of the body;

a second sputtering target coupled to the second side of the body;

a retention device comprising a first magnetic plate and a second magnetic plate wherein the first magnetic plate is configured to maintain the first sputtering target in a fixed position with respect to the first side of the body and the second magnetic plate is configured to maintain the second sputtering target in a fixed position with respect to the second side of the body; and

a rotation mechanism configured to rotatably couple to the double-sided sputtering target structure within the deposition chamber, the rotation mechanism configured to rotate the double-sided sputtering target structure.

10. The PVD system of claim 9 , wherein the rotation mechanism comprises at least one rotation shaft extending from the body of the double-sided sputtering target structure and extending through a side wall of the deposition chamber.

11. The PVD system of claim 9 , further comprising a drive mechanism coupled to the rotation mechanism, wherein the drive mechanism is configured to rotate the double-sided sputtering target structure from the first orientation to the second orientation.

12. The PVD system of claim 11 , wherein the drive mechanism comprises a motor.

13. The PVD system of claim 9 , wherein the first and second sputtering targets are magnetically coupled to the first and second sides of the body.

14. The PVD system of claim 9 , wherein the first and second materials are different materials.

15. The PVD system of claim 14 , wherein the first material comprises titanium nitride and the second material comprises aluminum copper.

16. A method of sputtering, comprising:

disposing a double-sided sputtering target structure in a deposition chamber, wherein the double-sided sputtering target structure comprises:

a body extending between a first side and an opposing second side,

a first sputtering target coupled to the first side of the body,

a second sputtering target coupled to the second side of the body, and

a retention device comprising a first magnetic plate and a second magnetic plate, wherein the first magnetic plate is configured to maintain the first sputtering target in a fixed position with respect to the first side of the body and the second magnetic plate is configured to maintain the second sputtering target in a fixed position with respect to the second side of the body;

positioning a work-piece in the deposition chamber, wherein the work-piece is positioned in an opposed facing relationship with the first sputtering target;

forming a first material layer on the work-piece by sputtering material from the first sputtering target;

rotating the double-sided sputtering target structure to position the second sputtering target in the opposed facing relationship with the work-piece; and

forming a second material layer on the work-piece by sputtering material from the second sputtering target.

17. The method of claim 16 , wherein the first material layer and the second material layer are each formed with the work-piece in the deposition chamber.

18. The method of claim 16 , comprising:

rotating the double-sided sputtering target to re-position the first sputtering target in the opposed facing relationship with the work-piece; and

forming a third material layer above the second material layer on the work-piece by sputtering material from the first sputtering target.

19. The method of claim 16 , wherein the deposition chamber is not cleaned between forming the first material layer and forming the second material layer.

20. The method of claim 16 , wherein the first material layer comprises titanium nitride and the second material layer comprises aluminum copper.