Method for forming amorphous silicon thin film, method for manufacturing semiconductor device including same, and semiconductor manufactured thereby
The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S 10 ) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate ( 100 ) to form a first amorphous silicon layer ( 310 b ), and a second step (S 20 ) of providing a first gas containing silicon on the substrate ( 100 ) having the first amorphous silicon layer ( 310 b ) formed thereon to form a second amorphous silicon layer ( 300 a ).
1. A method for forming an amorphous silicon thin film, the method comprising:
a first step (S 10 ) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate ( 100 ) to form a first amorphous silicon layer ( 310 b ); and
a second step (S 20 ) of providing the first gas containing silicon on the substrate ( 100 ) having the first amorphous silicon layer ( 310 b ) formed thereon to form a second amorphous silicon layer ( 300 a ),
wherein a supply flow rate of the first gas in the first step (S 10 ) and a supply flow rate of the first gas in the second step (S 20 ) are different from each other,
wherein the method is performed while changing the supply flow rate of the first gas in the first step (S 10 ) to an initial supply flow rate of the first gas in the second step (S 20 ).
2. The method of claim 1 , wherein the first step (S 10 ) is performed while gradually decreasing a supply flow rate of the second gas in a gradual manner.
3. The method of claim 1 , wherein the first step (S 10 ) is performed while decreasing a supply flow rate of the second gas in a stepwise manner.
4. The method of claim 1 , wherein an initial supply flow rate of the second gas in the first step (S 10 ) is 1 to 25% of an initial supply flow rate of the first gas in the first step (S 10 ).
5. The method of claim 1 , wherein the first gas is SiH 4 .
6. The method of claim 1 , wherein the second gas is at least one of NH 3 and N 2 .
7. A method for manufacturing a semiconductor device, the method comprising:
an amorphous silicon thin film formation step of forming an amorphous silicon thin film on a substrate ( 100 ); and
an etching step of etching the amorphous silicon thin film formed on the substrate ( 100 ), wherein the amorphous silicon thin film formation step further comprises:
a first step (S 10 ) of providing a first gas containing silicon and a second gas containing nitrogen on the substrate ( 100 ) to form a first amorphous silicon layer ( 310 b ); and
a second step (S 20 ) of providing the first gas containing silicon on the substrate ( 100 ) having the first amorphous silicon layer ( 310 b ) formed thereon to form a second amorphous silicon layer ( 300 a ),
wherein a supply flow rate of the first gas in the first step (S 10 ) and a supply flow rate of the first gas in the second step (S 20 ) are different from each other,
wherein the method is performed while changing the supply flow rate of the first gas in the first step (S 10 ) to an initial supply flow rate of the first gas in the second step (S 20 ).
8. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7 .