High-resolution display apparatus with low-resistance wiring
A display apparatus includes a substrate; a thin-film transistor on the substrate, where the thin-film transistor includes a semiconductor layer and a gate electrode overlapping the semiconductor layer with a first insulating layer between the gate electrode and the semiconductor layer; and a display element electrically connected to the thin-film transistor. The gate electrode includes a first lower layer and a first upper layer on the first lower layer and including a different material from the first lower layer. The first lower layer has a first thickness from an upper surface of the first insulating layer, and the first upper layer has a second thickness from an upper surface of the first lower layer, where the second thickness is greater than the first thickness.
1. A display apparatus comprising:
a substrate;
a thin-film transistor on the substrate, wherein the thin-film transistor includes a semiconductor layer and a gate electrode overlapping the semiconductor layer with a first insulating layer between the gate electrode and the semiconductor layer; and
a display element electrically connected to the thin-film transistor,
wherein
the gate electrode includes: a first lower layer; and a first upper layer on the first lower layer and including a different material from the first lower layer, and
the first lower layer has a first thickness from an upper surface of the first insulating layer,
the first upper layer has a second thickness from an upper surface of the first lower layer, wherein the second thickness is greater than the first thickness,
wherein
the first lower layer includes tungsten (W) or a tungsten alloy, and
the first upper layer includes molybdenum (Mo),
wherein
the tungsten alloy of the first lower layer includes tungsten (W) and a first element,
an amount of the first element in the tungsten alloy is less than about 50 wt %, and
the first element is selected from titanium (Ti), zirconium (Zr) and hafnium (Hf).
2. The display apparatus of claim 1 , wherein
the first thickness is in a range of about 250 Å to about 1200 Å, and
the second thickness is in a range of about 2000 Å to about 7000 Å.
3. The display apparatus of claim 1 , further comprising:
a storage capacitor including:
the gate electrode; and
an upper electrode overlapping the gate electrode with a second insulating layer between the upper electrode and the gate electrode.
4. The display apparatus of claim 3 , wherein
the upper electrode includes: a second lower layer; and a second upper layer on the second lower layer and including a different material from the second lower layer,
the second lower layer has a third thickness from an upper surface of the second insulating layer, and
the second upper layer has a fourth thickness from an upper surface of the second lower layer, wherein the fourth thickness is greater than the third thickness.
5. The display apparatus of claim 4 , wherein
the second lower layer includes tungsten (W) or a tungsten alloy,
the second upper layer includes molybdenum (Mo),
the third thickness is in a range of about 250 Å to about 1200 Å, and
the fourth thickness is in a range of about 2000 Å to about 7000 Å.
6. The display apparatus of claim 5 , wherein
the tungsten alloy of the second lower layer includes tungsten (W) and a second element,
an amount of the second element in the tungsten alloy is less than 50 wt %, and
the second element is selected from titanium (Ti), zirconium (Zr) and hafnium (Hf).
7. The display apparatus of claim 1 , further comprising:
a storage capacitor including:
a lower electrode on the substrate; and
an upper electrode overlapping the lower electrode with a second insulating layer between the upper electrode and the lower electrode.
8. The display apparatus of claim 7 , wherein the lower electrode is spaced apart from the gate electrode.
9. The display apparatus of claim 1 , wherein
the gate electrode further includes: a third lower layer on the first upper layer; and a third upper layer on the third lower layer and including a different material from the third lower layer,
the third lower layer has a fifth thickness from an upper surface of the first upper layer, and
the third upper layer has a sixth thickness from an upper surface of the third lower layer, wherein the sixth thickness is greater than the fifth thickness.
10. The display apparatus of claim 9 , wherein
each of the first thickness and the fifth thickness is in a range of about 250 Å to about 600 Å, and
each of the second thickness and the sixth thickness is in a range of about 2000 Å to about 3500 Å.
11. The display apparatus of claim 1 , wherein the display element comprises:
a pixel electrode electrically connected to the thin-film transistor;
an intermediate layer on the pixel electrode; and
an opposite electrode on the intermediate layer.
12. The display apparatus of claim 1 , wherein the substrate comprises a glass material or a polymer resin.
13. A display apparatus comprising:
a substrate;
a first insulating layer on the substrate; and
a gate electrode on the first insulating layer,
wherein the gate electrode includes:
a plurality of first lower layers including tungsten (W) or a tungsten alloy; and
a plurality of first upper layers including molybdenum (Mo),
wherein the plurality of first lower layers is alternately stacked with the plurality of first upper layers, and
one of the plurality of first lower layers is closest to the substrate,
wherein the tungsten alloy of the gate electrode includes tungsten (W) and a first element,
an amount of the first element in the tungsten alloy is less than about 50 wt %, and
the first element is selected from titanium (Ti), zirconium (Zr) and hafnium (Hf).
14. The display apparatus of claim 13 , wherein a thickness of each of the plurality of first upper layers is greater than a thickness of each of the plurality of first lower layers.
15. The display apparatus of claim 14 , wherein a thickness of the gate electrode is in a range of about 2250 Å to about 8200 Å.
16. The display apparatus of claim 13 , further comprising:
a storage capacitor including:
the gate electrode; and
an upper electrode overlapping the gate electrode with a second insulating layer between the upper electrode and the gate electrode.
17. The display apparatus of claim 16 , wherein
the upper electrode is on the second insulating layer,
the upper electrode includes: a plurality of second lower layers including tungsten (W) or a tungsten alloy; and a plurality of second upper layers including molybdenum (Mo),
the plurality of second lower layers is alternately stacked with the plurality of second upper layers, and
one of the plurality of second lower layers is closest to the substrate.
18. The display apparatus of claim 17 , wherein a thickness of each of the plurality of second upper layers is greater than a thickness of each of the plurality of second lower layers.
19. The display apparatus of claim 18 , wherein a thickness of the upper electrode is in a range of about 2250 Å to about 8200 Å.
20. The display apparatus of claim 17 , wherein
the tungsten alloy of the upper electrode includes tungsten (W) and a second element,
an amount of the second element in the tungsten alloy is less than about 50 wt %, and
the second element is selected from titanium (Ti), zirconium (Zr) and hafnium (Hf).
21. The display apparatus of claim 13 , further comprising:
a storage capacitor including:
a lower electrode on the substrate; and
an upper electrode overlapping the lower electrode with a second insulating layer between the upper electrode and the lower electrode.
22. The display apparatus of claim 21 , wherein the lower electrode is spaced apart from the gate electrode.