Photoresist contact patterning of quantum dot films

1. A method for creating a patterned quantum dot layer, the method comprising:

bringing a patterning stamp in contact with a layer of quantum dots disposed on a substrate, the patterning stamp comprising a patterned photoresist layer disposed on an elastomer layer, such that a portion of the quantum dots in contact with the patterned photoresist layer adheres to the patterning stamp, the portion of the quantum dots being adhered quantum dots;

peeling the elastomer layer of the patterning stamp from the substrate with a peeling speed smaller than a pre-determined peeling speed, such that the patterned photoresist layer is released from the patterning stamp and remains on the layer of quantum dots on the substrate;

depositing a layer of a second material on the patterned photoresist layer and the layer of quantum dots; and

removing the patterned photoresist layer from the substrate with a pressure sensitive adhesive (PSA) layer to remove the adhered quantum dots, such that a remaining portion of quantum dots forms a patterned quantum dot layer capped with the layer of the second material.

2. The method according to claim 1 , the method further comprising:

spin-casting a solution of quantum dots on the substrate to form the layer of quantum dots; and

spin-casting a zinc oxide (ZnO) layer on top of the layer of quantum dots.

3. The method according to claim 1 , wherein:

the elastomer layer comprises a polydimethysiloxane (PDMS) layer.

4. The method according to claim 1 , wherein:

the substrate comprises a silicon substrate coated with octadecyltrichlorosilane (ODTS); and

the layer of the second material comprises a metal layer.

5. The method according to claim 1 , wherein:

the pre-determined peeling speed is 1 mm per second.

6. The method according to claim 1 , further comprising:

prior to bringing the patterning stamp in contact with the quantum dots, photolithographically patterning a photoresist film on the elastomeric layer to form the patterned photoresist layer on the elastomer layer.

7. The method according to claim 1 , further comprising:

before bringing the patterning stamp in contact with the layer of quantum dots disposed on the substrate, heating the patterning stamp to about 65° C.; and

wherein the peeling the elastomer layer of the patterning stamp from the substrate comprises:

peeling the elastomer layer of the patterning stamp from the substrate with the peeling speed smaller than the pre-determined peeling speed at a temperature of about 65° C.

8. The method according to claim 1 , the method further comprising:

bringing a transferring stamp in contact with the layer of the second material on top of a transferring portion of the pattern quantum dot layer so as to adhere to the layer of the second material, the transferring portion of the pattern quantum dot layer being transferring quantum dots;

moving the transferring stamp comprising with the layer of the second material and the transferring quantum dots from the substrate to a desired location with respect to a receiving substrate;

contacting the transferring quantum dots with the receiving substrate; and

removing the transferring stamp from the receiving substrate, the transferring stamp being released from the layer of the second material, such that the quantum dots capped with the layer of the second material remain on the receiving substrate to form a second patterned quantum dot layer.

9. The method according to claim 8 , wherein:

the transferring stamp comprises one of an elastomer stamp or a shape memory polymer (SMP) stamp.

10. The method according to claim 8 , wherein:

the receiving substrate comprises a glass layer, a patterned indium tin oxide (ITO) layer, a poly(3,4-ethylenedioxythiophene)polystyrenesulfonate (PEDOT:PSS) layer, and a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(4-s-butylphenyl)) diphenyl amine)] (TFB) layer.