IP Library Granted Patent US 11,652,196
Granted Patent B2
US 11,652,196 · App. 17/024,833 · Granted May 16, 2023

Display module and manufacturing method thereof

Inventors: Myunghee Kim (Suwon-si, KR); Donghwan Kim (Suwon-si, KR); Sungwook Kim (Suwon-si, KR); Yong Namkung (Suwon-si, KR); Jenghun Suh (Suwon-si, KR); Jaephil Shim (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L33/62H01L24/29H01L24/83H01L25/0753H01L33/0093H01L33/405H01L33/42H01L33/44H01L33/58H01L2224/29239H01L2224/29244H01L2224/29255H01L2224/29263H01L2224/29269H01L2224/29287H01L2224/29293H01L2224/83894H01L2933/0016H01L2933/0025H01L2933/0058H01L2933/0066
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Quick Facts
Patent No.
US 11,652,196
App. No.
17/024,833
Granted
May 16, 2023
Kind
B2
Abstract

A display module and a manufacturing method thereof are provided. The manufacturing method may include forming an epitaxial film comprising a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer, attaching the epitaxial film to an intermediate substrate comprising a conductive material, patterning the epitaxial film to form a light emitting diode (LED) and coupling the LED to a driving circuit layer through the conductive material.

Claims (26)

1. A method of manufacturing a display module, the method comprising:

forming an epitaxial film comprising a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer provided in a vertically stacked arrangement;

attaching the epitaxial film onto an intermediate substrate, after forming the epitaxial film in the vertically stacked arrangement, the intermediate substrate comprising a conductive material;

patterning the epitaxial film to form a light emitting diode (LED); and

electrically connecting the LED to a driving circuit layer through the conductive material.

2. The method as claimed in claim 1 , wherein the connecting the LED to the driving circuit layer comprises:

attaching the intermediate substrate onto the driving circuit layer formed on a substrate to electrically connect the first type semiconductor layer of the LED to the driving circuit layer through the conductive material and to electrically connect the second type semiconductor layer of the LED to the driving circuit layer through the conductive material.

3. The method as claimed in claim 2 , wherein the LED has a vertical structure, and

the conductive material comprises at least one of carbon nano tube (CNT), graphene, or metal nano wire.

4. The method as claimed in claim 3 , wherein the driving circuit layer comprises a pixel circuit, and a first electrode and a second electrode coupled to the pixel circuit to electrically connect the first electrode and the second electrode to the pixel circuit.

5. The method as claimed in claim 4 , further comprising forming a passivation element on a sidewall of the LED.

6. The method as claimed in claim 5 , wherein the connecting the second type semiconductor layer of the LED to the driving circuit layer comprises:

forming a transparent electrode along the passivation element; and

electrically connecting the second type semiconductor layer of the LED to the second electrode of the driving circuit layer through the transparent electrode and the conductive material.

7. The method as claimed in claim 6 , further comprising forming a black matrix on the intermediate substrate in a region between the LED and another LED.

8. The method as claimed in claim 4 , wherein the intermediate substrate further comprises an adhesive material, and

wherein the intermediate substrate is attached onto the driving circuit layer through the adhesive material to electrically connect the first type semiconductor layer of the LED to the first electrode of the driving circuit layer through the conductive material.

9. The method as claimed in claim 8 , wherein the adhesive material comprises at least one of epoxy, polyimide, or phenol.

10. The method as claimed in claim 2 , further comprises forming a reflective electrode on a lower portion of the first type semiconductor layer or an upper portion of the second type semiconductor layer.

11. The method of claim 1 , wherein the attaching the epitaxial film onto the intermediate substrate comprises the attaching the epitaxial film onto the intermediate substrate using an adhesive portion of the intermediate substrate.

12. The method of claim 1 , wherein the attaching the epitaxial film onto the intermediate substrate comprises the attaching the epitaxial film directly onto the intermediate substrate.

13. The method of claim 12 , wherein the first type semiconductor layer or the second type semiconductor layer is in direct contact with the intermediate substrate.

14. The method as claimed in claim 1 ,

wherein the conductive material comprises a first conductive portion configured to connect to the first type semiconductor layer of the LED, and a second conductive portion configured to connect to the second type semiconductor layer of the LED.

15. The method as claimed in claim 14 , wherein the connecting the LED to the driving circuit layer comprises:

attaching the intermediate substrate onto the driving circuit layer formed on a substrate to electrically connect the first type semiconductor layer of the LED to the driving circuit layer through the first conductive portion of the conductive material and to electrically connect the second type semiconductor layer of the LED to the driving circuit layer through the second conductive portion of the conductive material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2020
From: KIM, MYUNGHEE; KIM, DONGHWAN; KIM, SUNGWOOK; NAMKUNG, YONG; SUH, JENGHUN; SHIM, JAEPHIL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 053813/0833 →
Priority Claims (2)
KR 10-2019-0128028 · Oct 15, 2019 · national
KR 10-2019-0152622 · Nov 25, 2019 · national
Continuity (1)
Related Publication 20210111325A1 · Apr 15, 2021
Cited By (1)
US 12,300,673