Electrically tunable surface acoustic wave resonator
View Patent ↗A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.
1. A surface acoustic wave (SAW) resonator device, comprising:
a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer, or IDT; a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element,
wherein
the IDT is configured so as to be connectable to a ground,
the conducting layer is configured so as to be connectable to said ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer, so as to define a gateable channel extending from said fingers to the ground via the conducting layer and the main ohmic contact, and
the gate element is electrically insulated from the conducting layer and further configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to said ground, in operation of the device.
2. The SAW resonator device according to claim 1 , wherein
the electrically conducting layer, the reflector grating and the gate element are monolithically integrated in the device.
3. The SAW resonator device according to claim 1 , wherein
the device further comprises side ohmic contacts, supported on the substrate, and
each of the fingers of the reflector grating is connected to a lateral side of the conducting layer via a respective one of the side ohmic contacts.
4. The SAW resonator device according to claim 3 , further comprising
a barrier, extending between the electrically conducting layer and the gate element, such that the electrically conducting layer extends between the substrate and the barrier, so as to electrically insulate the gate element from the conducting layer.
5. The SAW resonator device according to claim 4 , wherein
the barrier comprises both a basis layer and an insulating layer, the latter patterned onto the basis layer, so as to extend between the basis layer and the gate element.
6. The SAW resonator device according to claim 4 , wherein
each of the side ohmic contacts and the main ohmic contact extends through the barrier, down to the electrically conducting layer.
7. The SAW resonator device according to claim 6 , wherein
the main ohmic contact and the side ohmic contacts comprise, each, a tip protruding above the barrier, whereby the barrier extends between protruding tips of the ohmic contacts and the electrically conducting layer.
8. The SAW resonator device according to claim 7 , wherein
the barrier and the electrically conducting layer altogether form a mesa on the substrate, and
each of the fingers of the reflector grating comprises an out-of-plane portion extending along a lateral side of the mesa, which out-of-plane portion leads to a contact portion contacting a respective one of the side ohmic contact.
9. The SAW resonator device according to claim 8 , wherein
the IDT comprises two sets of interdigitated electrodes, wherein electrodes of one of said sets comprise, each, an out-of-plane portion extending along a lateral side of the mesa, which out-of-plane portion leads to a contact portion contacting the main ohmic contact.
10. The SAW resonator device according to claim 1 , wherein
said substrate comprises a piezoelectric material.
11. The SAW resonator device according to claim 1 , wherein
the substrate comprises a non-piezoelectric material, supporting one or more piezoelectric material portions, which support the fingers and elements of the IDT.
12. The SAW resonator device according to claim 3 , wherein
said plurality of electrically separated fingers are arranged in two sets of fingers, wherein the two sets of fingers extend on opposite sides of the IDT on the substrate.
13. The SAW resonator device according to claim 12 , wherein
each of said fingers is electrically connected to a same lateral side of the conducting layer, via a respective one of the side ohmic contacts and the IDT is arranged vis-à-vis that same lateral side.
14. The SAW resonator device according to claim 12 , wherein
each of the fingers of the two sets is bent in-plane with the substrate, so as for the fingers to exhibit, each, a first portion and a second portion, whereby first portions for the fingers are parallel to each other and second portions for the fingers are parallel to each other,
the first portions of the fingers of one of the two sets connect to respective side ohmic contacts on a first lateral side of the conducting layer, whereas
the first portions of the fingers of the other one of the two sets connect to respective side ohmic contacts on a second lateral side of the conducting layer that is opposite to said first lateral side, and
the IDT is arranged vis-à-vis a third lateral side of the conducting layer, which third lateral side extends between and contiguous to said first lateral side and said second lateral side, whereby the IDT extends between second portions of the fingers of one of the two sets and second portions of the fingers of the other one of the two sets.
15. The SAW resonator device according to claim 1 , wherein
the gate element extends parallel to a given lateral side of the conducting layer to which fingers of the reflector grating connect.
16. The SAW resonator device according to claim 1 , wherein
said given lateral side of the conducting layer has a comb profile, exhibiting teeth, whereby fingers of the reflector grating connect to a respective one of the teeth via a respective one of the side ohmic contacts.
17. The SAW resonator device according to claim 12 , wherein
said gate element is a first gate element and the device further comprises a second gate element, which is electrically insulated from the conducting layer and the first gate element, whereby two gateable channels are defined for the two sets of fingers, respectively, each of the channels extending from fingers of a respective one of the two sets to the ground, and
the first gate element and the second gate element are, each, configured to independently allow an electrical impedance of a respective one of the two gateable channels to be continuously tuned by applying a voltage bias to the corresponding gate element with respect to said ground, in operation of the device.
18. The SAW resonator device according to claim 17 , wherein
the IDT is sufficiently reflecting to act both as an acoustic source and an acoustic reflector, so as to decouple behaviors of the two sets of fingers, in operation of the device.