FeFET with embedded conductive sidewall spacers and process for forming the same

1. A device, comprising:

a substrate that includes a base portion and a fin portion that extends upward from the base portion;

an insulator layer on sides and top of the fin portion;

a first conductor layer on a first side surface of the insulator layer;

a second conductor layer on a second side surface of the insulator layer;

a ferroelectric layer on portions of a top surface of the base portion, a portion of the insulator layer below the first conductor layer, a side and top surface of the first conductor layer, a top surface of the insulator layer above the fin portion, a side and top surface of the second conductor layer, and a portion of the insulator layer below the second conductor layer; and

a word line conductor on the top surface of the ferroelectric layer.

2. The device of claim 1 , wherein the first conductor layer and the second conductor layer are metallic spacers that separate portions of the insulator layer on sides of the fin portion from the ferroelectric layer.

3. The device of claim 1 , wherein the ferroelectric layer is part of a ferroelectric capacitor.

4. The device of claim 1 , wherein the first conductor layer and the second conductor layer have a thickness of 1 to 10 nm.

5. The device of claim 1 , wherein the first conductor layer and the second conductor layer are formed from TiN, TaN, Tungsten, Ti or Ta.

6. The device of claim 1 , wherein the first conductor layer and the second conductor layer includes a polycrystalline grain structure.

7. The device of claim 1 , wherein the device includes a memory component.

8. A system, comprising: one or more processing components; and one or more storage components, at least one of the one or more processing components and the one or more storage components including a device comprising:

a substrate that includes a base portion and a fin portion that extends upward from the base portion;

an insulator layer on sides and top of the fin portion;

a first conductor layer on a first side surface of the insulator layer;

a second conductor layer on a second side surface of the insulator layer;

a ferroelectric layer on portions of a top surface of the base portion, a portion of the insulator layer below the first conductor layer, a side and top surface of the first conductor layer, a top surface of the insulator layer above the fin portion, a side and top surface of the second conductor layer, and a portion of the insulator layer below the second conductor layer; and

a word line conductor on the top surface of the ferroelectric layer.

9. The system of claim 8 , wherein the first conductor layer and the second conductor layer are metallic spacers that separate portions of the insulator layer on sides of the fin portion from the ferroelectric layer.

10. The system of claim 8 , wherein the ferroelectric layer is part of a ferroelectric capacitor.

11. The system of claim 8 , wherein the first conductor layer and the second conductor layer have a thickness of 1 to 10 nm.

12. The system of claim 8 , wherein the first conductor layer and the second conductor layer are formed from TiN, TaN, Tungsten, Ti or Ta.

13. The system of claim 8 , wherein the first conductor layer and the second conductor layer includes a polycrystalline grain structure.

14. The system of claim 8 , wherein the device includes a memory component.

15. A method, comprising:

forming a substrate that includes a base portion and a fin portion that extends upward from the base portion;

forming an insulator layer on sides and top of the fin portion;

forming a first portion of a conductor layer on a first side surface of the insulator layer and a second portion of the conductor layer on a second side surface of the insulator layer;

forming a ferroelectric layer on portions of a top surface of the base portion, a portion of the insulator layer that is below the first portion of the conductor layer, a side and top surface of the first portion of the conductor layer, a top surface of the insulator layer above the fin portion, a side and top surface of the second portion of the conductor layer, and a portion of the insulator layer that is below the second portion of the conductor layer; and

forming a word line conductor on the top surface of the ferroelectric layer.

16. The method of claim 15 , wherein the first portion of the conductor layer and the second portion of the conductor layer are metallic spacers.

17. The method of claim 15 , wherein the ferroelectric layer is part of a ferroelectric capacitor.

18. The method of claim 15 , wherein the first portion of the conductor layer and the second portion of the conductor layer have a thickness of 1 to 10 nm.

19. The method of claim 15 , wherein the first portion of the conductor layer and the second portion of the conductor layer are formed from TiN, TaN, Tungsten, Ti or Ta.

20. The method of claim 15 , wherein the first portion of the conductor layer and the second portion of the conductor layer includes a polycrystalline grain structure.

21. The method of claim 15 , wherein the method forms a memory component.

22. A method, comprising:

forming a substrate that includes a base and a fin that extends upward from the base;

forming an insulator layer on the base and on side and top portions of the fin;

forming a first conductor layer above the insulator layer;

removing portions of the insulator layer on a top surface of the base and portions of the first conductor layer on the insulator layer on the top surface of the base and above the fin;

forming a ferroelectric layer on exposed portions of the base, exposed portions of the insulator layer, and top and side surfaces of remaining portions of the first conductor layer; and

forming a second conductor layer on the ferroelectric layer.

23. The method of claim 22 , wherein the removing is by anisotropic directional etch.

24. The method of claim 22 , wherein the first conductor layer has a thickness of 1 to 10 nm.

25. The method of claim 22 , wherein the first conductor layer is formed from TiN, TaN, Tungsten, Ti or Ta.