Electroluminescent device with improved resolution and reliability
Disclosed is an electroluminescent display device ( 100 ) comprising a plurality of pixels ( 120 ) disposed on a substrate ( 110 ), each pixel being formed by one or more basic emitting zones ( 121 a, b, c ), every basic emitting zone having a base electrode ( 102 a, b, c ) disposed on said substrate ( 110 ) and an OLED stack ( 105 ) comprising an electroluminescent layer disposed on said base electrode ( 102 a, b, c ), the device ( 100 ) further comprising a common electrode ( 107 ) disposed on top of the OLED stack, said device being characterized in that: —two adjacent base electrodes ( 102 a, 102 b ) belonging to two adjacent basic emitting zones ( 121 a, b ) are separated by a filler element having an insulating surface ( 103 ) which fills the zone ( 111 ) between said adjacent base electrodes ( 102 a, 102 b ) and electrically insulates them from each other; at least the surface of said filler element having an insulating surface ( 103 ) in contact with the base electrodes ( 102 a, 102 b ) is made of an insulating material; a separator ( 104 ) is situated above the filler element ( 103 ) and separates the electroluminescent layers of the OLED stack ( 105 ) from two adjacent basic emitting zones ( 121 a, b ).
1. Electroluminescent display device ( 200 ) comprising a plurality of pixels ( 213 ) deposited on a substrate ( 210 ), each pixel being formed by one or more basic emitting zones ( 201 a,b,c ), two adjacent basic emitting zones being separated by a space ( 211 ) having vertical walls, each basic emitting zone including a base electrode ( 202 a,b,c ) deposited directly on said substrate ( 210 ),
and each basic emitting zone further including an OLED stack ( 205 ) comprising an electroluminescent layer deposited on said base electrode ( 202 a,b,c ), and said device ( 200 ) comprising a common electrode ( 207 ) deposited on top of said OLED stack, said device being characterized in that:
two adjacent base electrodes ( 202 a , 202 b ) belonging to two adjacent basic emitting zones ( 201 a , 201 b ) are separated by a filler element ( 203 ) with insulating surface ( 223 ), disposed in the space ( 211 ) between said basic emitting zones ( 201 ), said insulating surface ( 223 ) coverings the surface of the base electrodes in the space ( 211 ) between said adjacent base electrodes ( 202 a , 202 b ) and which insulates them electrically from each other;
at least the surface ( 223 ) of said filler element ( 203 ) with insulating surface ( 223 ) that is in contact with said base electrodes ( 202 a , 202 b ) is produced from an insulating material.
2. Device according to claim 1 , characterized in that said substrate ( 210 ) is an active matrix substrate comprising a silicon substrate of the CMOS type, or a substrate of the glass or plastics material type comprising TFT transistors.
3. Device according to claim 2 , characterized in that said space ( 211 ) between said adjacent base electrodes ( 202 a , 202 b ) is in the form of a trench.
4. Device according to claim 2 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a conductive transparent layer extends, capable of injecting charge carriers into the OLED stack, deposited between said OLED stack ( 205 ) and said common electrode ( 207 ), the thickness of said conductive transparent layer preferably being between 0.5 nm and 5 nm.
5. Device according to claim 1 , characterized in that
a separator ( 204 ) is situated on top of said filler element ( 203 ) and separates the electroluminescent layers of the OLED stack ( 205 ) of two adjacent basic emitting zones ( 201 a,b );
said separator ( 204 ) fills a top part of the zone between said adjacent base electrodes ( 202 a , 202 b );
the layers of the OLED stack ( 205 ) are interrupted by the separator ( 204 );
said separator ( 204 ) comprises said common electrode ( 207 ).
6. Device according to claim 5 , characterized in that said filler element ( 203 ) projects with its insulating material ( 223 ) over part of the surface of said base electrodes ( 202 a , 202 b ).
7. Device according to claim 5 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a conductive transparent layer extends, capable of injecting charge carriers into the OLED stack, deposited between said OLED stack ( 205 ) and said common electrode ( 207 ), the thickness of said conductive transparent layer preferably being between 0.5 nm and 5 nm.
8. Device according to claim 1 , characterized in that said space ( 211 ) between said adjacent base electrodes ( 202 a , 202 b ) is in the form of a trench.
9. Device according to claim 8 , characterized in that said filler element ( 203 ) projects with its insulating material ( 223 ) over part of the surface of said base electrodes ( 202 a , 202 b ).
10. Device according to claim 9 , characterized in that said conductive transparent layer is preferably a molybdenum oxide or a tungsten oxide.
11. Device according to claim 10 , characterized in that said top electrode layer is produced from a thin metal comprising aluminum (Al) or silver (Ag).
12. Device according to claim 11 , characterized in that it comprises an encapsulation system ( 220 ) deposited on top of the common electrode ( 207 ).
13. Device according to claim 10 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a top electrode extends, with a thickness of between 4 nm and 10 nm and deposited by a directive deposition technique comprising thermal evaporation.
14. Device according to claim 10 , characterized in that it comprises an encapsulation system ( 220 ) deposited on top of the common electrode ( 207 ).
15. Device according to claim 8 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a conductive transparent layer extends, capable of injecting charge carriers into the OLED stack, deposited between said OLED stack ( 205 ) and said common electrode ( 207 ), the thickness of said conductive transparent layer preferably being between 0.5 nm and 5 nm.
16. Device according to claim 1 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a conductive transparent layer extends, capable of injecting charge carriers into the OLED stack, deposited between said OLED stack ( 205 ) and said common electrode ( 207 ), the thickness of said conductive transparent layer preferably being between 0.5 nm and 5 nm.
17. Device according to claim 16 , characterized in that said conductive transparent layer was deposited by a directive deposition technique comprising thermal evaporation.
18. Device according to claim 17 , characterized in that, between two adjacent separators ( 204 ), and delimited by the latter, a top electrode extends, with a thickness of between 4 nm and 10 nm and deposited by a directive deposition technique comprising thermal evaporation.
19. Device according to claim 18 , characterized in that said top electrode layer is produced from a thin metal comprising aluminum (Al) or silver (Ag).
20. Device according to claim 18 , characterized in that it comprises an encapsulation system ( 220 ) deposited on top of the common electrode ( 207 ).
21. Device according to claim 17 , characterized in that it comprises an encapsulation system ( 220 ) deposited on top of the common electrode ( 207 ).
22. Device according to claim 21 , characterized in that said encapsulation system ( 220 ) comprises a polymer layer ( 221 ) and an inorganic layer, preferably an oxide ( 222 ).
23. Device according to claim 22 , characterized in that it comprises an inorganic layer, preferably an oxide, deposited between the common electrode ( 207 ) and the polymer layer ( 221 ).
24. Device according to claim 23 , characterized in that it comprises a smoothing layer ( 108 , 208 ) deposited either on top of said common electrode ( 107 , 207 ) or on top of said encapsulation system ( 220 ).
25. Device according to claim 17 , characterized in that said conductive transparent layer is preferably a molybdenum oxide or a tungsten oxide.
26. Device according to claim 1 , characterized in that it comprises a smoothing layer ( 108 , 208 ) deposited either on top of said common electrode ( 107 , 207 ) or on top of said encapsulation system ( 220 ).
27. Device according to claim 26 , characterized in that it comprises a system of colored filters ( 209 ), deposited on the common electrode ( 207 ), or preferably on the encapsulation system ( 220 ), or even more preferentially on said smoothing layer ( 208 ).
28. Device according to claim 26 , characterized in that it comprises two superimposed OLED stacks.
29. Device according to claim 1 , characterized in that it comprises a system of colored filters ( 209 ), deposited on the common electrode ( 207 ), or preferably on the encapsulation system ( 220 ), or even more preferentially on said smoothing layer ( 208 ).
30. Device according to claim 29 , characterized in that it comprises two superimposed OLED stacks.
31. Device according to claim 29 , characterized in that said common electrode ( 207 ) has been deposited by a conformal deposition technique comprising ALD (atomic layer deposition) or CVD (chemical vapor deposition).
32. Device according to claim 1 , characterized in that it comprises two superimposed OLED stacks.
33. Device according to claim 32 , characterized in that the two OLED stacks are separated by a charge generation layer.
34. Device according to claim 33 , characterized in that said base electrode ( 202 a,b,c ) is covered on its top by a layer of transparent conductive material capable of injecting charge carriers in an organic layer for OLED.
35. Device according to claim 33 , characterized in that said common electrode ( 207 ) has been deposited by a conformal deposition technique comprising ALD (atomic layer deposition) or CVD (chemical vapor deposition).
36. Device according to claim 32 , characterized in that said base electrode ( 202 a,b,c ) is covered on its top by a layer of transparent conductive material capable of injecting charge carriers in an organic layer for OLED.
37. Device according to claim 32 , characterized in that said common electrode ( 207 ) has been deposited by a conformal deposition technique comprising ALD (atomic layer deposition) or CVD (chemical vapor deposition).
38. Device according to claim 1 , characterized in that said common electrode ( 207 ) has been deposited by a conformal deposition technique comprising ALD (atomic layer deposition) or CVD (chemical vapor deposition).
39. Device according to claim 38 , characterized in that said base electrode ( 202 a,b,c ) is covered on its top by a layer of transparent conductive material capable of injecting charge carriers in an organic layer for OLED.
40. Device according to claim 1 , characterized in that said base electrode ( 202 a,b,c ) is covered on its top by a layer of transparent conductive material capable of injecting charge carriers in an organic layer for OLED.