Hybrid bridged fanout chiplet connectivity
A chip for hybrid bridged fanout chiplet connectivity, the chip comprising: a central chiplet; one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces; and one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs).
1. A chip for hybrid bridged fanout chiplet connectivity, the chip comprising:
a central chiplet;
one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces and not connected to the central chiplet using an interconnect die; and
one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs), wherein the one or more interconnect dies are in a layer that does not include the plurality of fanout traces.
2. The chip of claim 1 , wherein each of the one or more second chiplets are positioned nearer to the central chiplet relative to the one or more first chiplets.
3. The chip of claim 1 , wherein the one or more first chiplets are positioned in a first column of chiplets and the one or more second chiplets are positioned in a second column of chiplets.
4. The chip of claim 1 , wherein the one or more first chiplets are positioned in a first row of chiplets and the one or more second chiplets are positioned in a second row of chiplets.
5. The chip of claim 1 , wherein the one or more first chiplets are coupled to the central chiplet by a plurality of fanout trace layers layered on a wafer including the central chiplet, the one or more first chiplets, and the one or more second chiplets positioned and fixed using molding.
6. The chip of claim 5 , wherein the one or more interconnect dies are bonded to a redistribution layer of the chip layered on the plurality of fanout trace layers.
7. The chip of claim 1 , further comprising one or more conductive pillars.
8. The chip of claim 7 , further comprising a plurality of caps for the one or more conductive pillars and the one or more interconnect dies (ICDs).
9. The chip of claim 8 , wherein the one or more second chiplets include a plurality of second chiplets, the one or more interconnecting dies include a plurality of interconnecting dies, and wherein each of the plurality of second chiplets is coupled to the central chiplet using a respective interconnecting die of the plurality of interconnecting dies.
10. An apparatus for hybrid bridged fanout chiplet connectivity, the apparatus comprising:
one or more components, wherein at least one component is operatively coupled to a chip and the chip comprises:
a central chiplet;
one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces and not connected to the central chiplet using an interconnect die; and
one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs), wherein the one or more interconnect dies are in a layer that does not include the plurality of fanout traces.
11. The apparatus of claim 10 , wherein each of the one or more second chiplets are positioned nearer to the central chiplet relative to the one or more first chiplets.
12. The apparatus of claim 10 , wherein the one or more first chiplets are positioned in a first column of chiplets and the one or more second chiplets are positioned in a second column of chiplets.
13. The apparatus of claim 10 , wherein the one or more first chiplets are positioned in a first row of chiplets and the one or more second chiplets are positioned in a second row of chiplets.
14. The apparatus of claim 10 , wherein the one or more first chiplets are coupled to the central chiplet by a plurality of fanout trace layers layered on a wafer including the central chiplet, the one or more first chiplets, and the one or more second chiplets positioned and fixed using molding.
15. The apparatus of claim 14 , wherein the one or more interconnect dies are bonded to a redistribution layer of the chip layered on the plurality of fanout trace layers.
16. The apparatus of claim 10 , wherein the chip comprises one or more conductive pillars.
17. The apparatus of claim 16 , further comprising a plurality of caps for the one or more conductive pillars and the one or more interconnect dies (ICDs).
18. The apparatus of claim 10 , wherein the one or more second chiplets include a plurality of second chiplets, the one or more interconnecting dies include a plurality of interconnecting dies, and wherein each of the plurality of second chiplets is coupled to the central chiplet using a respective interconnecting die of the plurality of interconnecting dies.
19. A method of hybrid bridged fanout chiplet connectivity, the method comprising:
coupling, to a central chiplet of a chip, one or more first chiplets using a plurality of fanout traces and not connected to the central chiplet using an interconnect die; and
coupling, to the central chiplet, one or more second chiplets using one or more interconnect dies (ICDs), wherein the one or more interconnect dies are in a layer that does not include the plurality of fanout traces.
20. The method of claim 19 , wherein each of the one or more second chiplets are positioned nearer to the central chiplet relative to the one or more first chiplets.
21. The method of claim 19 , wherein the one or more first chiplets are positioned in a first column of chiplets and the one or more second chiplets are positioned in a second column of chiplets.
22. The method of claim 19 , wherein the one or more first chiplets are positioned in a first row of chiplets and the one or more second chiplets are positioned in a second row of chiplets.
23. The method of claim 19 , wherein coupling, to the central chiplet, the one or more first chiplets comprises layering a plurality of fanout trace layers on a wafer including the central chiplet, the one or more first chiplets, and the one or more second chiplets positioned and fixed using molding.
24. The method of claim 19 , wherein coupling, to the central chiplet, the one or more second chiplets comprises bonding the one or more interconnect dies to a redistribution layer of the chip.
25. The method of claim 19 , further comprising forming one or more conductive pillars in a layer of the chip.
26. The method of claim 25 , further comprising capping the one or more conductive pillars and the one or more interconnect dies.
27. The method of claim 19 , wherein the one or more second chiplets include a plurality of second chiplets, the one or more interconnecting dies include a plurality of interconnecting dies, and wherein each of the plurality of second chiplets is coupled to the central chiplet using a respective interconnecting die of the plurality of interconnecting dies.