Solid-state imaging element, imaging device, and control method of solid-state imaging element
An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.
1. A light detection device comprising:
a first semiconductor substrate including
a photoelectric conversion element,
a transfer transistor coupled to the photoelectric conversion element,
a floating diffusion coupled to the transfer transistor,
an amplification transistor coupled to the floating diffusion, and
a selection transistor coupled to the amplification transistor; and
a second semiconductor substrate including
an event detection circuitry that includes
at least a portion of current/voltage conversion circuitry that outputs a first pixel signal based on an output of the photoelectric conversion element, and
a quantizer that outputs a first digital signal based on the first pixel signal, wherein,
an analog to digital conversion circuitry receives a second pixel signal based on an output of the photoelectric conversion element via the selection transistor, and converts the second pixel signal to a second digital signal.
2. The light detection device according to claim 1 , wherein
the first pixel signal is supplied to a connection node, and
the event detection circuitry is configured to detect whether a change amount of the first pixel signal exceeds a predetermined threshold.
3. The light detection device according to claim 2 , wherein
the second pixel signal is selected via the selection transistor when the change amount of the first pixel signal exceeds the predetermined threshold.
4. The light detection device according to claim 1 , wherein
the first semiconductor substrate is arranged on a first chip, and
the second semiconductor substrate is arranged on a second chip stacked on the first chip.
5. The light detection device according to claim 1 , wherein
the photoelectric conversion element is arranged on a first chip, and
the event detection circuitry is arranged on a second chip stacked on the first chip.
6. The light detection device according to claim 5 , wherein
the analog to digital conversion circuitry is arranged on the second chip.
7. The solid-state imaging element according to claim 1 , wherein
the current/voltage conversion circuitry is configured to convert a photocurrent based on the output of the photoelectric conversion element into a voltage signal of a logarithm of the photocurrent.