Magnetic memory device and manufacturing method of magnetic memory device
According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.
1. A magnetic memory device comprising:
a first conductor extending along a first direction;
a second conductor extending along a second direction and above the first conductor; and
a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element,
wherein:
the first layer stack has a rectangular shape along a stack surface of the first layer stack,
the rectangular shape of the first layer stack has first side and a second side intersecting with the first side, each of the first side and the second side intersecting with both the first direction and the second direction,
the first magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and
a magnetization direction of the first ferromagnetic layer and a magnetization direction of the second ferromagnetic layer are each perpendicular to the stack surface of the first layer stack.
2. The device of claim 1 , further comprising:
a third conductor extending along the first direction and being aligned with the first conductor along the second direction; and
a second layer stack provided between the third conductor and the second conductor and including a second magnetoresistance effect element,
wherein:
the second layer stack has a rectangular shape along a stack surface of the second layer stack, and
the rectangular shape of the second layer stack has a third side and a fourth side intersecting with the third side, each of the third side and the fourth side intersecting with both the first direction and the second direction.
3. The device of claim 2 , wherein the first side of the rectangular shape of the first layer stack is parallel to the third side of the rectangular shape of the second layer stack.
4. The device of claim 2 , further comprising:
a fourth conductor extending along the second direction and being aligned with the second conductor along the first direction; and
a third layer stack provided between the third conductor and the fourth conductor and including a third magnetoresistance effect element,
wherein:
the third layer stack has a rectangular shape along a stack surface of the third layer stack, and
the rectangular shape of the third layer stack has a fifth side and a sixth side intersecting with the fifth side, each of the fifth side and the sixth side intersecting with both the first direction and the second direction.
5. The device of claim 4 , wherein the first side of the rectangular shape of the first layer stack is parallel to the fifth side of the rectangular shape of the third layer stack.
6. The device of claim 4 , further comprising:
an insulator provided between the first conductor and the third conductor below the first layer stack, the second layer stack, and the third layer stack,
wherein a first portion of the insulator between the first layer stack and the second layer stack and a second portion of the insulator between the first layer stack and the third layer stack have upper surfaces of a same level.
7. The device of claim 2 , wherein a distance between the first layer stack and the second layer stack is at most 50 nm.
8. The device of claim 7 , wherein the first side of the rectangular shape in the nonmagnetic layer has a length of 20 nm or less.
9. The device of claim 8 , wherein the nonmagnetic layer includes an oxide of magnesium (Mg).
10. The device of claim 9 , wherein the first ferromagnetic layer and the second ferromagnetic layer include at least one element selected from iron (Fe), cobalt (Co), and nickel (Ni).
11. The device of claim 10 , wherein:
the first ferromagnetic layer takes a first resistance value in accordance with a first current that flows from the first ferromagnetic layer to the second ferromagnetic layer, and
the first ferromagnetic layer takes a second resistance value in accordance with a second current flowing from the second ferromagnetic layer to the first ferromagnetic layer.
12. The device of claim 11 , wherein the first resistance value is lower than the second resistance value.
13. The device of claim 1 , wherein the first layer stack further includes a switching element coupled in series to the first magnetoresistance effect element.