Semiconductor module
A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.
1. A semiconductor module comprising:
a semiconductor device that comprises:
an insulating substrate having a main surface and a back surface that face opposite to each other in a thickness direction;
a first conductive portion arranged on the main surface;
a first switching element electrically connected to the first conductive portion;
a second conductive portion arranged on the main surface;
a second switching element electrically connected to the second conductive portion;
a first input terminal having a first terminal portion and electrically connected to the first conductive portion; and
a second input terminal having a second terminal portion overlapping with the first terminal portion as viewed in the thickness direction, the second input terminal being spaced apart from the first input terminal and the first conductive portion in the thickness direction and electrically connected to the second switching element; and
a sealing resin having an approximately rectangular shape in a plan view and sealing the first input terminal and the second input terminal so that they are partially exposed from a first side of the sealing resin,
wherein the sealing resin partially covers lateral surfaces and upper surfaces of the first input terminal and the second input terminal but does not cover tips of central portions of the first input terminal and the second input terminal.
2. The semiconductor module according to claim 1 , wherein the semiconductor device further comprises an insulating member disposed between the first input terminal and the second input terminal in the thickness direction.
3. The semiconductor module according to claim 2 , wherein the insulating member comprises: an interposed portion located between the first terminal portion and the second terminal portion in the thickness direction; and an extension portion extending from the interposed portion toward the first side in the first direction beyond the first terminal portion and the second terminal portion.
4. The semiconductor module according to claim 2 , wherein the insulating member is constituted by insulating paper.
5. The semiconductor module according to claim 2 , wherein a thickness of the insulating member and the first and second conductive portions is smaller than a half of that of the sealing resin.
6. The semiconductor module according to claim 3 , wherein a tip of the insulating member is longer than tips of the first input terminal and the second input terminal.
7. The semiconductor module according to claim 3 , wherein a tip of the insulating member is flush with a side of the sealing resin.
8. The semiconductor module according to claim 1 , further comprising an output terminal electrically connected to a connection point of the first switching element and the second switching element, wherein the output terminal is exposed from a side of the sealing resin opposite to the first side of the sealing resin from which the input terminals are exposed.
9. The semiconductor module according to claim 1 , wherein the second switching element is disposed on a main surface of the second conductive portion.
10. The semiconductor module according to claim 1 , wherein the back surface of the insulating substrate is exposed from the sealing resin.
11. The semiconductor module according to claim 8 , wherein the tip of the output terminal recesses inward from the first side of the sealing resin.
12. The semiconductor module according to claim 1 , wherein each of the first switching element and the second switching element is an SiC MOSFET or an IGBT.
13. The semiconductor module according to claim 8 , wherein control terminals are exposed from a side of the sealing resin different from the sides of the sealing resin from which the input terminals and the output terminal are exposed.
14. The semiconductor module according to claim 10 , wherein respective portions of the first terminal portion, the second terminal portion, and the insulating member are covered by the sealing resin portion.
15. The semiconductor module according to claim 1 , wherein the first conductive portion and the first switching element are conducted to each other via a back surface of the first switching element.
16. The semiconductor module according to claim 1 , wherein the second conductive portion and the second switching element are conducted to each other via a back surface of the second switching element.
17. The semiconductor module according to claim 1 , wherein the second input terminal further includes a linkage portion and a plurality of comb teeth-shaped extension portions, and is electrically connected to the second switching element through the respective extension portions.