Solid-state image sensor
The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.
1. A solid-state image sensor, comprising:
a semiconductor substrate having first photoelectric conversion elements and at least one second photoelectric conversion element;
an isolation structure disposed between the first photoelectric conversion elements and the at least one second photoelectric conversion element:
a color filter layer disposed above the semiconductor substrate and having a first color filter segment corresponding to the first photoelectric conversion elements and a second color filter segment corresponding to the at least one second photoelectric conversion element; and
a hybrid layer disposed between the semiconductor substrate and the color filter layer, and comprising:
a first partition structure disposed to correspond to the isolation structure;
a second partition structure surrounded by the first partition structure; and
a transparent layer between the first partition structure and the second partition structure;
wherein a refractive index of the first partition structure and a refractive index of the second partition structure are lower than a refractive index of the transparent layer.
2. The solid-state image sensor as claimed in claim 1 , wherein a height of the second partition structure is lower than a height of the first partition structure.
3. The solid-state image sensor as claimed in claim 1 , wherein from a cross-sectional view of the solid-state image sensor, the first partition structure comprises first partition segments, the second partition structure comprises second partition segments, and each of the first partition segments and each of the second partition segments have different shapes.
4. The solid-state image sensor as claimed in claim 3 , wherein each of the first partition segments is formed into a rectangle, and each of the second partition segments is formed into a triangle or a semi-circle.
5. The solid-state image sensor as claimed in claim 1 , wherein from a top view of the hybrid layer, the second partition structure is formed into a square, a rectangle, or two cross rectangles.
6. The solid-state image sensor as claimed in claim 1 , wherein the second partition structure is in direct contact with the first partition structure.
7. The solid-state image sensor as claimed in claim 1 , wherein a height of the second partition structure is higher than a height of the first partition structure.
8. The solid-state image sensor as claimed in claim 7 , wherein a portion of the second partition structure is disposed inside the first color filter segment.
9. The solid-state image sensor as claimed in claim 1 , wherein the semiconductor substrate has second photoelectric conversion elements, and the second partition structure corresponds to the first photoelectric conversion elements or the second photoelectric conversion elements.
10. The solid-state image sensor as claimed in claim 9 , wherein the first color filter segment and the second color filter segment comprise red color filter segment, green color filter segment, blue color filter segment, yellow color filter segment, white color filter segment, cyan color filter segment, magenta color filter segment, or IR/NIR color filter segment.
11. The solid-state image sensor as claimed in claim 10 , wherein a height of the first partition structure is constant, and a height of the second partition structure is variable.
12. The solid-state image sensor as claimed in claim 11 , wherein the height of the second partition structure corresponding to the first color filter segment is different from the height of the second partition structure corresponding to the second color filter segment.
13. The solid-state image sensor as claimed in claim 1 , further comprising:
a condensing structure disposed on the color filter layer,
wherein the condensing structure comprises a first micro-lens corresponding to the first photoelectric conversion elements and a second micro-lens corresponding to the at least one second photoelectric conversion element.
14. The solid-state image sensor as claimed in claim 13 , wherein the first micro-lens corresponds to m×n first photoelectric conversion elements, and m and n are positive integers.
15. The solid-state image sensor as claimed in claim 14 , wherein the second micro-lens corresponds to one second photoelectric conversion element.
16. The solid-state image sensor as claimed in claim 1 , wherein the first partition structure has a shift with respect to the isolation structure in an edge area of the solid-state image sensor.
17. The solid-state image sensor as claimed in claim 1 , further comprising:
a metal grid disposed at a bottom of the first partition structure.
18. The solid-state image sensor as claimed in claim 1 , wherein the refractive index of the transparent layer is greater than 1.0.
19. The solid-state image sensor as claimed in claim 1 , wherein the refractive index of the first partition structure and the refractive index of the second partition structure are different.
20. The solid-state image sensor as claimed in claim 1 , wherein a thickness of the hybrid layer is in a range from 0.01 μm to 2.0 μm.