Semiconductor device with strain relaxed layer
A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
1. A semiconductor device, comprising:
an epitaxial substrate comprising:
a substrate;
a nucleation layer covering and contacting the substrate, wherein the nucleation layer comprises aluminum nitride;
a transition layer covering and contacting the nucleation layer, wherein the transition layer comprises aluminum gallium nitride;
a superlattice covering and contacting the transition layer, wherein the superlattice is formed by periodically stacking aluminum gallium nitride and aluminum nitride;
a strain-relaxed layer inserted into the superlattice, wherein the superlattice comprises silicon oxide, silicon nitride or silicon carbide; and
a gate electrode disposed on a protective layer and embedded within an aluminum gallium nitride layer, wherein the protective layer is disposed on the epitaxial substrate.
2. The semiconductor device of claim 1 , wherein a chemical formula of the aluminum gallium nitride in the transition layer is Al x Ga 1-x N, and 0.7≤X≤0.8.
3. The semiconductor device of claim 1 , wherein a chemical formula of the aluminum gallium nitride in the superlattice is Al y Ga 1-y N, and 0.2≤Y≤0.3.
4. The semiconductor device of claim 1 , further comprising:
a device layer contacting and covering the epitaxial substrate, wherein the device layer comprises:
a gallium nitride layer; and
the aluminum gallium nitride layer disposed on the gallium nitride layer.
5. The semiconductor device of claim 4 , further comprising:
an HEMT disposed on the epitaxial substrate, wherein the HEMT comprises:
the epitaxial substrate;
the device layer;
a source electrode and a drain electrode disposed on the aluminum gallium nitride layer; and
the gate electrode disposed between the source electrode and the drain electrode.
6. The semiconductor device of claim 1 , wherein a thickness of the strain-relaxed layer is greater than 1 nanometer.