Three-dimensional memory device having adjoined source contact structures and methods for forming the same
Embodiments of structure and methods for forming a memory device are provided. In an example, a memory device includes a substrate, a stack above the substrate, a channel structure, and a source contact structure each extending vertically through the memory stack. The source contact structure includes (i) a plurality of first source contact portions each extending vertically and laterally separated from one another and (ii) a second source contact portion extending vertically over and in contact with the plurality of first source contact portions, the second source contact portion being laterally continuous.
1. A memory device, comprising:
a substrate;
a memory stack above the substrate;
a channel structure; and
a source contact structure extending vertically through the memory stack, wherein the source contact structure comprises:
(i) a plurality of first source contact portions each being separated from one another in a lateral direction, upper surfaces of the plurality of first source contact portions being lower than an upper surface of the memory stack, and
(ii) a second source contact portion over and in direct contact with the plurality of first source contact portions at the upper surfaces of the plurality of first source contact portions, the second source contact portion being continuous in the lateral direction.
2. The memory device of claim 1 , wherein the plurality of first source contact portions are evenly spaced from one another along the lateral direction.
3. The memory device of claim 2 , wherein, along a lateral plane, a cross-section of each of the plurality of first source contact portions includes one of a circular shape, an elliptic shape, a rectangular shape, a stripe shape, or a squared shape.
4. The memory device of claim 3 , wherein the plurality of first source contact portions each has one of a cylindrical shape or a trapezoid shape extending in from the second source contact portion to the substrate.
5. The memory device of claim 1 , wherein the plurality of first source contact portions comprise the same materials.
6. The memory device of claim 5 , wherein the plurality of first source contact portions and the second source contact portions comprise metal.
7. The memory device of claim 5 , wherein the plurality of first source contact portions comprise polysilicon and the second source contact portion comprises one or more of polysilicon and metal.
8. The memory device of claim 1 , wherein the source contact structure is located between two memory fingers in a memory block in the memory stack.
9. The memory device of claim 1 , wherein an upper surface of the second source contact portion is coplanar with an upper surface of the memory stack.
10. A memory device, comprising:
a substrate;
a memory stack above the substrate; and
a plurality of channel structures and a plurality of source contact structures comprising a plurality of first source contact structures and a plurality of second source contact structures, each extending vertically through the memory stack, wherein:
the first source contact structures each comprises (i) a plurality of first source contact portions each being separated from one another and (ii) a second source contact portion over and in direct contact with the plurality of first source contact portions, the second source contact portion being continuous, an upper surface of the second source contact portion being coplanar with an upper surface of the memory stack, and
the second source contact structures each extends continuously in the memory stack.
11. The memory device of claim 10 , wherein the first source contact structures are each between two fingers in the memory stack, and the second source contact structures are each between two blocks in the memory stack.
12. The memory device of claim 10 , wherein at least one of the first source contact structures is located between a pair of the second source contact structures.
13. The memory device of claim 10 , wherein the plurality of first source contact portions are evenly spaced from one another along a lateral direction.
14. The memory device of claim 10 , wherein, along a lateral plane, a cross-section of each of the plurality of first source contact portions includes one of a circular shape, an elliptic shape, a rectangular shape, a stripe shape, or a squared shape.
15. A memory device, comprising:
a substrate;
a memory stack, comprising a first deck and a second deck in contact with the first deck at an interface between the first deck and the second deck, above the substrate;
a channel structure; and
a source contact structure extending vertically through the memory stack, wherein the source contact structure comprises:
(i) a plurality of first source contact portions each being separated from one another in a lateral direction, upper surfaces of the plurality of first source contact portions being lower than an upper surface of the memory stack, and
(ii) a second source contact portion over and in contact with the plurality of first source contact portions, the second source contact portion being continuous with the plurality of first source contact portions in the lateral direction.
16. The memory device of claim 15 , wherein the plurality of first source contact portions are evenly spaced from one another along the lateral direction.
17. The memory device of claim 16 , wherein, along a lateral plane, a cross-section of each of the plurality of first source contact portions includes one of a circular shape, an elliptic shape, a rectangular shape, a stripe shape, or a squared shape.
18. The memory device of claim 15 , wherein the plurality of first source contact portions comprise the same materials.
19. The memory device of claim 15 , wherein the plurality of first source contact portions are in contact with the second source contact portion at the interface between the first deck and the second deck.
20. The memory device of claim 15 , wherein the source contact structure is located between two memory fingers in a memory block in the memory stack.