Organic light-emitting display apparatus and method of manufacturing the same

1. An organic light-emitting display apparatus comprising:

a lower substrate;

a buffer layer;

a conductive layer having a plurality of penetration openings and located on the buffer layer and above the lower substrate;

an insulating layer on the conductive layer, the insulating layer and the buffer layer having a plurality of penetration holes exposing the lower substrate, multiple ones of the penetration holes being located in a single one of the penetration openings;

a sealant disposed in the plurality of penetration holes;

an upper substrate disposed on the sealant; and

a thin film transistor comprising a gate electrode,

wherein a collective area of a penetration hole set having the multiple ones of the penetration holes in the insulating layer is smaller than an area of the single one of the penetration openings in which the penetration hole-set is located, and

wherein the conductive layer and the gate electrode are directly on a same layer.

2. The organic light-emitting display apparatus of claim 1 , further comprising an additional insulating layer between the lower substrate and the insulating layer.

3. The organic light-emitting display apparatus of claim 1 , wherein an inner surface of each of the plurality of penetration openings in the conductive layer is covered by the insulating layer, and does not contact the sealant.

4. The organic light-emitting display apparatus of claim 1 , wherein a distance between the penetration holes of the plurality of penetration holes in the insulating layer is 2.5 μm or more.

5. The organic light-emitting display apparatus of claim 1 , wherein the conductive layer comprises a same material as that of the gate electrode of the thin film transistor.

6. The organic light-emitting display apparatus of claim 5 , wherein the conductive layer and the gate electrode are disposed on a same layer.

7. The organic light-emitting display apparatus of claim 1 , further comprising an organic emission layer under the upper substrate.

8. An organic light-emitting display apparatus comprising:

a lower substrate comprising a display area and a peripheral area around the display area;

a buffer layer on the lower substrate;

an insulating layer on the buffer layer in the display area and the peripheral area of the lower substrate, the insulating layer and the buffer layer having a plurality of penetration holes in the peripheral area;

a conductive layer located in the insulating layer, the conductive layer having a plurality of penetration openings;

an upper substrate on the lower substrate;

a sealant in the plurality of penetration holes bonding the lower substrate to the upper substrate; and

a thin film transistor comprising a gate electrode,

wherein the insulating layer and the buffer layer comprise a plurality of penetration hole sets, each penetration hole set corresponding to one of the penetration openings in the conductive layer,

wherein each penetration hole set of the plurality of penetration hole sets comprises two or more of the penetration holes of the plurality of penetration holes within a respective penetration opening of the plurality of penetration openings,

wherein a total area of a penetration hole set among the plurality of penetration hole sets in the insulating layer and the buffer layer is smaller than an area of a corresponding penetration opening from among the plurality of penetration openings in the conductive layer, and

wherein the conductive layer and the gate electrode are directly on a same layer.

9. The organic light-emitting display apparatus of claim 8 , further comprising an additional insulating layer between the lower substrate and the insulating layer.

10. The organic light-emitting display apparatus of claim 8 , wherein an inner surface of each of the plurality of penetration openings in the conductive layer is covered by the insulating layer, and does not contact the sealant.

11. The organic light-emitting display apparatus of claim 8 , wherein a distance between the penetration holes of the plurality of penetration holes in the insulating layer is 2.5 μm or more.

12. The organic light-emitting display apparatus of claim 8 , wherein the conductive layer comprises a same material as that of the gate electrode of the thin film transistor.

13. The organic light-emitting display apparatus of claim 12 , wherein the conductive layer and the gate electrode are disposed on a same layer.

14. The organic light-emitting display apparatus of claim 8 , further comprising an organic emission layer under the upper substrate.