Semiconductor device
Disclosed is a display device including: a substrate; a first insulating film over the substrate, the first insulating film exposing a part of the substrate to provide an exposed surface to the substrate; a second insulating film in contact with the exposed surface and a first side surface of the first insulating film; and a first wiring over the second insulating film and in contact with the exposed surface, the first insulating film, and the second insulating film. The display device may further possess a third insulating film spaced from the second insulating film and in contact with the exposed surface. The first insulating film has a second side surface opposing the first side surface through the exposed surface. The third insulating film may be in contact with the second side surface, and the wiring may be located over and in contact with the third insulating film.
1. A semiconductor device comprising:
a substrate having a first region, a second region, and a trench overlapping with a region between the first region and second region and having a first sidewall and a second sidewall facing each other;
a pair of first insulating films over and in contact with the substrate in the first region and the second region;
a pair of second insulating films in the trench, the pair of second insulating films being spaced away from each other and respectively in contact with the first sidewall and the second sidewall; and
a plurality of wirings over and in contact with the pair of first insulating films and the pair of second insulating films, the plurality of wirings being in contact with the substrate in the trench, wherein
each of the pair of second insulating films is not in contact with an upper surface of the first insulating film, and
the pair of first insulating films overlaps with the trench, and the pair of second insulating films is partly covered by the pair of first insulating films.
2. The semiconductor device according to claim 1 , wherein
one of the pair of second insulating films and the other of the pair of second insulating films are apart from each other.
3. The semiconductor device according to claim 1 , wherein
the plurality of wirings is in contact with a side surface and a top surface of each of the pair of first insulating films.
4. The semiconductor device according to claim 1 , wherein
surfaces of the pair of second insulating films in contact with the plurality of wirings are inclined from the first sidewall and the second sidewall in a cross-sectional view.
5. The semiconductor device according to claim 1 , further comprising:
a pair of third insulating films over the first region and the second region, respectively, and sandwiched by the pair of first insulating films and the plurality of wirings; and
a pair of fourth insulating films over and in contact with the pair of first insulating films, respectively, the pair of fourth insulating films being in contact with the pair of third insulating films, respectively, wherein
top surfaces of the pair of first insulating films are exposed from the pair of fourth insulating films, and
the plurality of wirings is in contact with the pair of third insulating films and the pair of fourth insulating films.
6. The semiconductor device according to claim 5 , wherein
the pair of third insulating films includes an inorganic compound containing silicon, and
the pair of fourth insulating films includes an organic compound containing carbon, oxygen, and hydrogen.
7. The semiconductor device according to claim 1 , further comprising:
a pair of third insulating films over the first region and the second region, respectively, and sandwiched by the pair of first insulating films and the plurality of wirings; and
a pair of fourth insulating films in contact with surfaces of the pair of third insulating films, the pair of fourth insulating films being spaced away from the pair of first insulating films, wherein
the plurality of wirings is in contact with the pair of third insulating films and the pair of fourth insulating films.
8. The semiconductor device according to claim 1 , wherein
the pair of third insulating films includes an inorganic compound containing silicon, and
the pair of fourth insulating films includes an organic compound containing carbon, oxygen, and hydrogen.
9. The semiconductor device according to claim 1 , wherein
the pair of first insulating films includes an inorganic compound containing silicon, and
the pair of second insulating films includes an organic compound containing carbon, oxygen, and hydrogen.
10. The semiconductor device according to claim 1 , further comprising a bent portion overlapping with the trench in a plan view.