Spin orbit coupling memory device with top spin orbit coupling electrode and selector
An apparatus is provided which comprises: a bit-line; a first word-line; a second word-line; and a source-line; a magnetic junction comprising a free magnet; an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the free magnet of the magnetic junction; and a first device (e.g., a selector device) coupled at one end of the interconnect and to the second word-line; and a second device coupled to the magnetic junction, the first word-line and the source-line.
1. An apparatus comprising:
a bit-line; a first word-line; a second word-line; and a source-line;
a magnetic junction comprising a free magnet;
an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the free magnet of the magnetic junction;
a first device coupled at one end of the interconnect, wherein the first device is coupled to the second word-line; and
a second device coupled to the magnetic junction, the first word-line, and the source-line, wherein the first device is a two-terminal selector device comprising metal and oxygen.
2. The apparatus of claim 1 , wherein the two-terminal selector device comprises:
a first structure comprising metal;
a second structure comprising oxygen; and
a third structure comprising metal, wherein the second structure is between the first and third structures.
3. The apparatus of claim 1 , wherein the interconnect is positioned in a backend-of-line (BEOL) of a die or near the BEOL of the die, and wherein the magnetic junction is closer to a frontend-of-line (FEOL) of the die compared to the interconnect.
4. The apparatus of claim 1 , wherein the free magnet has perpendicular magnetization relative to a plane of the apparatus.
5. The apparatus of claim 1 , wherein the free magnet comprises a material comprising one or more of Co, Fe, Ni, or O.
6. The apparatus of claim 1 , wherein the free magnet is one of a paramagnet or a ferromagnet.
7. The apparatus of claim 1 , comprising:
a processor;
a memory coupled to the processor, the memory comprising the bit-line, first and second word- lines, and source-line, magnetic junction, interconnect, and first and second devices; and
a wireless interface to allow the processor to communicate with another device.
8. An apparatus, comprising: a bit-line; a first word-line; a second word-line; and a source-line; a magnetic junction comprising a free magnet; an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the free magnet of the magnetic junction; a first device coupled at one end of the interconnect, wherein the first device is coupled to the second word-line; and a second device coupled to the magnetic junction, the first word-line, and the source-line, wherein the first device comprises one or more of Pt, Te, Mo, Se, S, Ti, Zn, In, Ga, Rh, Nb, or Sn.
9. The apparatus of claim 8 , wherein the first device comprises:
a first structure comprising metal;
a second structure comprising oxygen; and
a third structure comprising metal, wherein the second structure is between the first and third structures.
10. The apparatus of claim 8 , wherein the interconnect is positioned in a backend-of-line (BEOL) of a die or near the BEOL of the die, and wherein the magnetic junction is closer to a frontend-of-line (FEOL) of the die compared to the interconnect.
11. The apparatus of claim 8 , wherein the free magnet has perpendicular magnetization relative to a plane of the apparatus.
12. The apparatus of claim 8 , wherein the free magnet comprises a material comprising one or more of Co, Fe, Ni, or O.
13. The apparatus of claim 8 , wherein the free magnet is one of a paramagnet or a ferromagnet.
14. The apparatus of claim 8 , comprising:
a processor;
a memory coupled to the processor, the memory comprising the bit-line, first and second word- lines, and source-line, magnetic junction, interconnect, and first and second devices; and
a wireless interface to allow the processor to communicate with another device.
15. An apparatus, comprising:
a bit-line; a first word-line; a second word-line; and a source-line;
a magnetic junction comprising a free magnet;
an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the free magnet of the magnetic junction;
a first device coupled at one end of the interconnect, wherein the first device is coupled to the second word-line; and
a second device coupled to the magnetic junction, the first word-line, and the source-line, wherein the interconnect is positioned in a backend-of-line (BEOL) of a die or near the BEOL of the die, and wherein the magnetic junction is closer to a frontend-of-line (FEOL) of the die compared to the interconnect.
16. The apparatus of claim 15 , wherein the first device comprises:
a first structure comprising metal;
a second structure comprising oxygen; and
a third structure comprising metal, wherein the second structure is between the first and third structures.
17. The apparatus of claim 15 , wherein the free magnet has perpendicular magnetization relative to a plane of the apparatus.
18. The apparatus of claim 15 , wherein the free magnet comprises a material comprising one or more of Co, Fe, Ni, or O.
19. The apparatus of claim 15 , wherein the free magnet is one of a paramagnet or a ferromagnet.
20. The apparatus of claim 15 , comprising:
a processor;
a memory coupled to the processor, the memory comprising the bit-line, first and second word- lines, and source-line, magnetic junction, interconnect, and first and second devices; and
a wireless interface to allow the processor to communicate with another device.