Semiconductor device
A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.
1. A semiconductor device comprising:
a first conductive plate and a second conductive plate that are spaced apart from each other in a top view;
a first switching element on the first conductive plate and a second switching element on the second conductive plate, the first switching element and the second switching element respectively having a front surface electrode, a back surface electrode, and a control electrode, the first switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the first switching element according to a signal input to the control electrode of the first switching element, the second switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the second switching element according to a signal input to the control electrode of the second switching element;
a first supply terminal electrically connected to the back surface electrode of the first switching element;
a second supply terminal electrically connected to the front surface electrode of the second switching element and having a region that overlaps with the first supply terminal in a top view,
wherein the second supply terminal has a plurality of protruding portions extending toward the second switching element, and
wherein the first switching element is arranged between the plurality of the protruding portions in a top view.
2. The semiconductor device according to claim 1 , wherein the plurality of the protruding portions are electrically connected to the front surface electrode of the second switching element, and the back surface electrode of the second switching element is electrically connected to the front surface electrode of the first switching element.
3. The semiconductor device according to claim 1 , wherein the first switching element and the second switching element respectively comprise a plurality of elements connected in parallel to one another.
4. The semiconductor device according to claim 1 , further comprising a third terminal electrically connected to a connection part of the front surface electrode of the first switching element and the back surface electrode of the second switching element.
5. The semiconductor device according to claim 4 , further comprising an insulating substrate and a sealing resin, wherein the first conductive plate and the second conductive plate are disposed on a surface of the insulating substrate, and the sealing resin covers the first supply terminal, the second supply terminal, the third terminal, and the insulating substrate so that portions of the first supply terminal, the second supply terminal, the third terminal, and the insulating substrate are exposed out of the sealing resin.
6. The semiconductor device according to claim 5 , further comprising a terminal insulating member held between the first supply terminal and the second supply terminal in a region where the first supply terminal and the second supply terminal are overlapped with each other and are exposed out of the sealing resin in a top view.
7. The semiconductor device according to claim 6 , wherein the terminal insulating member has a portion which is larger in size than the exposed portion of the first supply terminal and the second supply terminal and is not overlapped with the exposed portion of the first supply terminal and the second supply terminal.
8. The semiconductor device according to claim 5 , wherein a direction in which the exposed portion of the third terminal extends is opposite to a direction in which the exposed portion of the first supply terminal and the second supply terminal extends.
9. The semiconductor device according to claim 8 , further comprising a control terminal electrically connected to the control electrode, wherein the control terminal is exposed out of the sealing resin, and the exposed portion of the control terminal extends in a direction orthogonal to the direction in which the exposed portion of the first supply terminal and the second supply terminal extends and to the direction in which the exposed portion of the third terminal extends.
10. The semiconductor device according to claim 7 , wherein each of the switching elements comprises a silicon carbide (SiC) MOSFET or an IGBT element.
11. The semiconductor device according to claim 1 , wherein the first conductive plate and the second conductive plate are made of a material that contains Cu.
12. The semiconductor device according to claim 1 , wherein thicknesses of the first conductive plate and the second conductive plate are 1.5 to 10 mm.
13. A semiconductor device comprising:
a first conductive plate and a second conductive plate that are spaced apart from each other in a top view;
a first switching element on the first conductive plate and a second switching element on the second conductive plate, the first switching element and the second switching element respectively having a front surface electrode, a back surface electrode, and a control electrode, the first switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the first switching element according to a signal input to the control electrode of the first switching element, the second switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the second switching element according to a signal input to the control electrode of the second switching element;
a first supply terminal electrically connected to the back surface electrode of the first switching element;
a second supply terminal electrically connected to the front surface electrode of the second switching element and having a region that overlaps with the first supply terminal in a top view;
a sealing resin that covers the first supply terminal and the second supply terminal so that a portion of the first supply terminal and the second supply terminal is exposed out of the sealing resin; and
a terminal insulating member held between the first supply terminal and the second supply terminal in a region where the first supply terminal and the second supply terminal are overlapped with each other and are exposed out of the sealing resin in a top view.
14. The semiconductor device according to claim 13 , further comprising an insulating substrate, wherein the first conductive plate and the second conductive plate are disposed on a surface of the insulating substrate, and the terminal insulating member has a portion which is larger in size than the exposed portion of the first supply terminal and the second supply terminal and is not overlapped with the exposed portion of the first supply terminal and the second supply terminal.
15. The semiconductor device according to claim 13 , wherein a length of an exposed portion of the terminal insulating member is larger than a length of the exposed portion of the first supply terminal and the second supply terminal.
16. The semiconductor device according to claim 15 , wherein each of the switching elements comprises a silicon carbide (SiC) MOSFET or an IGBT element.
17. The semiconductor device according to claim 13 , wherein the first conductive plate and the second conductive plate are made of a material that contains Cu.
18. The semiconductor device according to claim 13 , wherein thicknesses of the first conductive plate and the second conductive plate are 1.5 to 10 mm.
19. A semiconductor device comprising:
a first conductive plate and a second conductive plate that are spaced apart from each other in a top view;
a first switching element on the first conductive plate and a second switching element on the second conductive plate,
the first switching element and the second switching element respectively having a front surface electrode, a back surface electrode, and a control electrode,
the first switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the first switching element according to a signal input to the control electrode of the first switching element,
the second switching element being configured to perform switching operation between the front surface electrode and the back surface electrode of the second switching element according to a signal input to the control electrode of the second switching element;
a first supply terminal electrically connected to the back surface electrode of the first switching element;
a second supply terminal electrically connected to the front surface electrode of the second switching element and having a region that overlaps with the first supply terminal in a top view;
a sealing resin that covers the first supply terminal and the second supply terminal so that a portion of the first supply terminal and the second supply terminal is exposed out of the sealing resin; and
at least one groove formed on a surface of the sealing resin in a direction orthogonal to a direction in which the first supply terminal and the second supply terminal extend out of the sealing resin,
wherein the at least one groove does not overlap with the first conductive plate or the second conductive plate in a top view.
20. A semiconductor device according to claim 19 , further comprising an insulating substrate, wherein the first conductive plate and the second conductive plate are disposed on a surface of the insulating substrate, and the at least one groove comprises a plurality of grooves that are arranged parallel to one another.
21. A semiconductor device according to claim 20 , wherein a length of the at least one groove is larger than a length of the exposed portion of the insulating substrate, and the at least one groove is in a region between the exposed portion of the terminals and the conductive plates.
22. The semiconductor device according to claim 19 , wherein each of the switching elements comprises a silicon carbide (SiC) MOSFET or an IGBT element.
23. The semiconductor device according to claim 19 , wherein the first conductive plate and the second conductive plate are made of a material that contains Cu.
24. The semiconductor device according to claim 19 , wherein thicknesses of the first conductive plate and the second conductive plate are 1.5 to 10 mm.