Semiconductor device structure and methods of forming the same
An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a two-dimensional material layer, a second conductive feature disposed over the first conductive feature, and a dielectric material disposed adjacent the first and second conductive features. The dielectric material extends from a level of a bottom of the first conductive feature to a level of a top of the second conductive feature.
1. An interconnection structure, comprising:
a first conductive feature comprising a two-dimensional material layer, a first conductive layer disposed on the two-dimensional material layer, and a second conductive layer, wherein the two-dimensional material layer is disposed on the second conductive layer;
a second conductive feature disposed over the first conductive feature and through the first conductive layer, the two-dimensional material layer, and in the second conductive layer; and
a dielectric material disposed adjacent the first and second conductive features.
2. The interconnection structure of claim 1 , wherein the two-dimensional material layer comprises graphene, hexagonal-BN, or transition metal dichalcogenide.
3. The interconnection structure of claim 2 , wherein the second conductive feature comprises a metal.
4. The interconnection structure of claim 3 , wherein the dielectric material is in contact with the second conductive feature.
5. The interconnection structure of claim 3 , further comprising a barrier layer disposed between the second conductive feature and the dielectric material.
6. The interconnection structure of claim 5 , wherein the barrier layer is disposed between the first conductive feature and the second conductive feature.
7. The interconnection structure of claim 1 , wherein the first and second conductive layers comprise a same material.
8. The interconnection structure of claim 1 , wherein the second conductive feature comprises a first portion and a second portion disposed over the first portion, wherein the second portion has larger dimensions than the first portion.
9. The interconnection structure of claim 8 , wherein the first portion of the second conductive feature is disposed through the first conductive layer, the two-dimensional material layer, and in the second conductive layer, and the second portion of the second conductive feature is disposed over the first conductive feature.
10. An interconnection structure, comprising:
a first conductive feature comprising a first two-dimensional material layer formed horizontally;
a second conductive feature comprising a second two-dimensional material layer formed horizontally, wherein a portion of the second conductive feature is disposed in the first conductive feature; and
a dielectric material disposed adjacent the first and second conductive features.
11. The interconnection structure of claim 10 , wherein the first two-dimensional material layer comprises a plurality of graphene layers, a plurality of hexagonal-BN layers, or a plurality of transition metal dichalcogenide layers.
12. The interconnection structure of claim 10 , wherein first conductive feature further comprises a first conductive layer and a second conductive layer, wherein the first two-dimensional material layer is disposed between the first and second conductive layers.
13. The interconnection structure of claim 12 , further comprising a first barrier layer disposed between the second conductive layer and the dielectric material.
14. The interconnection structure of claim 13 , further comprising a second barrier layer disposed between the first conductive layer and the dielectric material.
15. An interconnection structure, comprising:
a first conductive feature, comprising:
a first conductive layer; and
a first two-dimensional material layer disposed on the first conductive layer;
a second conductive feature, wherein a portion of the second conductive feature is disposed through the first two-dimensional material layer and in the first conductive layer; and
a dielectric material disposed adjacent the first and second conductive features, wherein the dielectric material extends from a level of a bottom of the first conductive layer to a level of a top of the second conductive feature.
16. The interconnection structure of claim 15 , wherein the first conductive feature further comprises a second conductive layer disposed on the first two-dimensional material layer.
17. The interconnection structure of claim 16 , wherein the second conductive feature is disposed through the second conductive layer.
18. The interconnection structure of claim 17 , wherein the second conductive feature comprises a metal.
19. The interconnection structure of claim 18 , further comprising a barrier layer disposed between the second conductive feature and the dielectric material.
20. The interconnection structure of claim 17 , wherein the second conductive feature comprises a second two-dimensional material layer.