IP Library › Granted Patent US 11,670,846
Granted Patent B2
US 11,670,846 · App. 17/327,644 · Granted Jun 6, 2023

Semiconductor device package and method of manufacturing the same

Inventors: Shao-En Hsu (Kaohsiung, TW); Huei-Shyong Cho (Kaohsiung, TW); Shih-Wen Lu (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01Q1/523H01Q1/2283H01Q1/243H01Q1/48H01Q5/378H01Q21/061
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Quick Facts
Patent No.
US 11,670,846
App. No.
17/327,644
Granted
Jun 6, 2023
Kind
B2
Abstract

A semiconductor device package includes a substrate, a first antenna pattern and a second antenna pattern. The substrate has a first surface and a second surface opposite to the first surface. The first antenna pattern is disposed over the first surface of the substrate. The first antenna pattern has a first bandwidth. The second antenna pattern is disposed over the first antenna pattern. The second antenna pattern has a second bandwidth different from the first bandwidth. The first antenna pattern and the second antenna pattern are at least partially overlapping in a direction perpendicular to the first surface of the substrate.

Claims (17)

1. A semiconductor device package, comprising:

a conductive layer including a surface;

a first antenna disposed over the surface of the conductive layer and configured for operating in a first frequency;

a second antenna disposed over the first antenna and configured for operating in a second frequency different from the first frequency; and

a third antenna disposed over the second antenna.

2. The semiconductor device package of claim 1 , wherein the third antenna is configured for operating in the second frequency.

3. The semiconductor device package of claim 1 , further comprising a first conductive path configured to pass through the first antenna and to be electrically connected with the second antenna.

4. The semiconductor device package of claim 3 , wherein the first conductive path is configured to pass through the conductive layer.

5. The semiconductor device package of claim 3 , wherein the first conductive path is physically disconnected with the first antenna.

6. The semiconductor device package of claim 3 , further comprising a second conductive path configured to pass through the first antenna and to be electrically connected with the second antenna.

7. The semiconductor device package of claim 6 , wherein the second conductive path is physically disconnected with the first antenna.

8. The semiconductor device package of claim 6 , wherein the second conductive path is configured to pass through the conductive layer.

9. The semiconductor device package of claim 1 , wherein the first frequency is less than the second frequency.

10. The semiconductor device package of claim 9 , wherein the first antenna includes an array of antenna elements.

11. The semiconductor device package of claim 10 , wherein the second antenna includes an array of antenna elements.

12. The semiconductor device package of claim 1 , further comprising a dielectric layer disposed over the surface of the conductive layer and configured to separate the first antenna from the second antenna.

13. The semiconductor device package of claim 12 , wherein the conductive layer includes a grounding layer.

Continuity (2)
Continuation 16448990 · Jun 21, 2019
Related Publication 20210280968A1 · Sep 9, 2021