Display device comprises a concentration of fluorine provides first peak in first area and second peak in third area contained in the semiconductor layer

1. A display device comprising:

a substrate; and

a semiconductor layer disposed on the substrate, and comprising a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer,

wherein the semiconductor layer comprises polycrystalline silicon,

a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and

the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

2. The display device of claim 1 , wherein the semiconductor layer further comprises a low point value as a lowest value of the concentration of the fluorine in the semiconductor layer, and

the low point value of the concentration of the fluorine is substantially equal to or less than the first peak value of the concentration of the fluorine.

3. The display device of claim 2 , wherein the low point value of the concentration of the fluorine is substantially equal to or less than 1E20 atoms/cm 3 .

4. The display device of claim 3 , wherein the low point value of the concentration of the fluorine is in the second area.

5. The display device of claim 1 , wherein the semiconductor layer further comprises a first surface facing the substrate and a second surface opposite to the first surface,

wherein the first surface is disposed in the first area, and the second surface is disposed in the third area, and

wherein the first peak value is disposed on the first surface, and the second peak value is disposed on the second surface in the thickness direction.

6. The display device of claim 1 , further comprising:

a barrier layer disposed on the substrate; and

a buffer layer disposed on the barrier layer, and comprising a first buffer film and a second buffer film sequentially stacked,

wherein the barrier layer and the second buffer film comprise silicon oxide, and the first buffer film comprises silicon nitride.

7. The display device of claim 6 , wherein a film density of the second buffer film is greater than a film density of the barrier layer.

8. The display device of claim 7 , wherein the film density of the second buffer film is in a range of about 2.2 g/cm 3 to about 2.25 g/cm 3 .

9. The display device of claim 6 , wherein a concentration of hydrogen of the second buffer film is lower than a concentration of hydrogen of the barrier layer.

10. The display device of claim 9 , wherein the concentration of hydrogen of the second buffer film is about 5 at % or less.

11. The display device of claim 6 , wherein the first buffer film comprises a third surface facing the barrier layer and a fourth surface opposite to the third surface,

a concentration of fluorine contained in the first buffer film has a third peak value on at least one of the third surface and the fourth surface, and

the third peak value of the concentration of the fluorine in the first buffer film is higher than a concentration of fluorine at a center point of the first buffer film in the thickness direction.

12. The display device of claim 11 , wherein the third peak value of the concentration of the fluorine in the first buffer film is about 2.5 times or less the concentration of the fluorine at the center point of the first buffer film.

13. The display device of claim 12 , wherein a concentration of carbon contained in the first buffer film has a fourth peak value on at least one of the third surface and the fourth surface, and

the fourth peak value of the concentration of the carbon in the first buffer film is about 2.5 times or less a concentration of carbon at the center point of the first buffer film.