Semiconductor packages having improved reliability in bonds between connection conductors and pads and methods of manufacturing the same
A semiconductor package includes a first semiconductor chip having a through-electrode and an upper connection pad on an upper surface of the first semiconductor chip that is connected to the through-electrode; a second semiconductor chip stacked on the first semiconductor chip, and having a lower connection pad on a lower surface of the second semiconductor chip; a non-conductive film between the first semiconductor chip and the second semiconductor chip, with the non-conductive film including voids having an average diameter of 1 μm to 100 μm, the voids having a volume fraction of 0.1 to 5 vol %; and a connection conductor that penetrates the non-conductive film and connects the upper connection pad and the lower connection pad.
1. A method of manufacturing a semiconductor package, comprising:
preparing a first semiconductor chip having a through-electrode and an upper connection pad connected to the through-electrode on an upper surface of the first semiconductor chip;
preparing a second semiconductor chip having a lower connection pad on a lower surface thereof and a connection conductor on the lower connection pad;
applying an uncured non-conductive film to the lower surface of the second semiconductor chip to cover the connection conductor, wherein the uncured non-conductive film includes voids that have a first average diameter at a first volume fraction;
stacking the second semiconductor chip to which the uncured non-conductive film is applied on the first semiconductor chip; and
heating and pressurizing the stacked first and second semiconductor chips using a pressurized fluid to cure the non-conductive film, the cured non-conductive film including voids that have a second average diameter at a second volume fraction, the second average diameter smaller than the first average diameter and the second volume fraction less than the first volume fraction.
2. The method of claim 1 , wherein during the heating and pressurizing of the stacked first and second semiconductor chips, the connection conductor is connected to the upper connection pad of the first semiconductor chip through the uncured non-conductive film.
3. The method of claim 1 , further comprising pre-bonding the stacked first and second semiconductor chips using thermocompression, wherein the pre-bonding occurs between the stacking and the heating and pressurizing.
4. The method of claim 1 , wherein the uncured conductive film has a first thickness, and wherein the cured conductive film has a second thickness that is smaller than the first thickness.
5. The method of claim 1 , wherein the first average diameter is in a range of 150 μm to 300 μm, and the second average diameter is 100 μm or less.
6. The method of claim 1 , wherein the second average diameter is in a range of 1 μm to 100 μm.
7. The method of claim 1 , wherein the first volume fraction is in a range of 8 to 20 vol %, and the second volume fraction is 5 vol % or less.
8. The method of claim 1 , wherein the second volume fraction is in a range of 0.1 to 5 vol %.
9. The method of claim 1 , wherein a side surface of the non-conductive film cured by the pressurized fluid has a concave side surface created during the curing of the non-conductive film.
10. The method of claim 1 , wherein the heating and pressurizing is performed in a temperature of 200° C. or higher and 10 atm or higher.
11. A method of manufacturing a semiconductor package, comprising:
preparing a first semiconductor chip having a through-electrode and an upper connection pad connected to the through-electrode on an upper surface of the first semiconductor chip;
stacking a second semiconductor chip having a lower connection pad on a lower surface thereof and a connection conductor on the lower connection pad on the first semiconductor chip, with an uncured non-conductive film between the first and the second semiconductor chips; and
heating and pressurizing the stacked first and second semiconductor chips using a pressurized fluid to cure the non-conductive film,
wherein the uncured non-conductive film includes voids having a first average diameter in a range of 150 μm to 300 μm, and wherein the cured non-conductive film includes voids having a second average diameter in a range of 1 μm to 100 μm, and
wherein a side surface of the cured non-conductive film has a concave shape when viewing the semiconductor package in cross-section.
12. The method of claim 11 , wherein the second average diameter is 50 μm or less.
13. The method of claim 11 , wherein the uncured non-conductive film includes voids at a first volume fraction, and the cured non-conductive film includes voids at a second volume fraction that is smaller than the first volume fraction, and wherein the second volume fraction is in a range of 0.1 to 5 vol %.
14. The method of claim 13 , wherein the second volume fraction is 2 vol % or less.
15. The method of claim 11 , wherein a nitrogen-containing gas is in the voids of the cured non-conductive film.
16. The method of claim 11 , further comprising providing a molding member on at least side surfaces of the stacked first and second semiconductor chips and on the side surface of the cured non-conductive film.
17. The method of claim 16 , further comprising providing a heat sink on the molding member and on an upper surface of the second semiconductor chip.
18. A method of manufacturing a semiconductor package, comprising:
preparing a first semiconductor chip having a through-electrode and an upper connection pad connected to the through-electrode on an upper surface of the first semiconductor chip;
stacking a second semiconductor chip having a lower connection pad on a lower surface thereof and a connection conductor on the lower connection pad on the first semiconductor chip, with an uncured non-conductive film between the first and the second semiconductor chips; and
heating and pressurizing the stacked first and second semiconductor chips using a pressurized fluid to cure the non-conductive film,
wherein the uncured non-conductive film includes voids having a first average diameter, and the cured non-conductive film includes voids having a second average diameter that is smaller than the first average diameter.
19. The method of claim 18 , wherein the second average diameter is in a range of 1 μm to 100 μm.
20. The method of claim 19 , wherein the first average diameter is in a range of 150 μm to 300 μm, and wherein the voids of the cured non-conductive film include a gas comprising nitrogen.