Meta optical devices and methods of manufacturing the same
A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.
1. A method of manufacturing a meta optical device, the method comprising:
preparing a dopant-containing layer, the dopant-containing layer including a first conductivity type dopant;
forming a crystalline silicon layer on the dopant-containing layer;
forming a first conductivity type semiconductor layer based on performing a first heat treatment process on the crystalline silicon layer to cause the first conductivity type dopant to move from the dopant-containing layer to a lower portion of the crystalline silicon layer to form the first conductivity type semiconductor layer in the lower portion of the crystalline silicon layer and to cause the dopant-containing layer to become a substrate such that the crystalline silicon layer and the first conductivity type semiconducting layer are located on the substrate;
implanting a second conductivity type dopant into the crystalline silicon layer that is on the substrate; and
forming a second conductivity type semiconductor layer based on performing a second heat treatment process on the crystalline silicon layer that is implanted with the second conductivity type dopant.
2. The method of claim 1 , wherein the preparing of the dopant-containing layer includes implanting the first conductivity type dopant into a silicon oxide substrate.
3. The method of claim 2 , further comprising:
forming a silicon oxide layer on the crystalline silicon layer prior to the implanting of the second conductivity type dopant into the crystalline silicon layer.
4. The method of claim 3 , further comprising:
removing the silicon oxide layer from the second conductivity type semiconductor layer subsequently to performing the second heat treatment process.
5. The method of claim 1 , wherein the preparing of the dopant-containing layer includes forming a borosilicate glass (BSG) layer on a silicon oxide substrate.
6. The method of claim 1 , wherein the forming of the crystalline silicon layer includes depositing a polycrystalline silicon material on the dopant-containing layer.
7. The method of claim 1 , wherein the forming of the crystalline silicon layer includes
bonding a silicon-on-insulator (SOI) substrate to the dopant-containing layer, the SOI substrate including a first monocrystalline silicon layer, an insulating material layer, and a second monocrystalline silicon layer;
removing the second monocrystalline silicon layer from the SOI substrate; and
removing the insulating material layer from the SOI substrate.
8. The method of claim 7 , further comprising:
depositing a silicon oxide layer on the dopant-containing layer, prior to bonding the SOI substrate to the dopant-containing layer, to bond the SOI substrate and the dopant-containing layer together.
9. The method of claim 1 , wherein the first heat treatment process forms a residual layer between the first conductivity type semiconductor layer and the substrate, the residual layer including SiO 2 and the first conductivity type dopant contained in the SiO 2 .
10. A method of manufacturing a meta optical device, the method comprising:
preparing a dopant-containing layer, the dopant-containing layer including a first conductivity type dopant;
forming a crystalline silicon layer on the dopant-containing layer;
forming a first conductivity type semiconductor layer based on performing a first heat treatment process on the crystalline silicon layer;
implanting a second conductivity type dopant into the crystalline silicon layer; and
forming a second conductivity type semiconductor layer based on performing a second heat treatment process on the crystalline silicon layer that is implanted with the second conductivity type dopant,
wherein the first conductivity type dopant includes a p-type dopant, and
wherein the second conductivity type dopant includes an n-type dopant.
11. The method of claim 10 , wherein the n-type dopant includes an element having an atomic weight equal to or greater than about 70.
12. A method of manufacturing a meta optical device, the method comprising:
preparing a dopant-containing layer, the dopant-containing layer including a first conductivity type dopant;
forming a crystalline silicon layer on the dopant-containing layer;
forming a first conductivity type semiconductor layer based on performing a first heat treatment process on the crystalline silicon layer;
implanting a second conductivity type dopant into the crystalline silicon layer;
forming a second conductivity type semiconductor layer based on performing a second heat treatment process on the crystalline silicon layer that is implanted with the second conductivity type dopant; and
patterning the first conductivity type semiconductor layer, the crystalline silicon layer, and the second conductivity type semiconductor layer to form a plurality of nanorods that are electrically isolated from each other.
13. The method of claim 12 , wherein the plurality of nanorods have a particular shape distribution that causes the plurality of nanorods to be configured to function as lenses and color filters.