Semiconductor device and power converter
A semiconductor device improved in deterioration detection accuracy by using an inductance of a bonding wire. The semiconductor device includes a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern; a second conductor pattern formed on the insulating substrate for sensing the potential of the surface electrode of the semiconductor die device; a first bonding wire for connecting the surface electrode and the first conductor pattern; and a second bonding wire. Further, there is a voltage sensing unit which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and a deterioration detection unit for detecting deterioration of the first bonding wire by using the sensed potential difference.
1. A semiconductor device comprising:
an insulating substrate;
a semiconductor die device attached on the insulating substrate and having a surface electrode on the top side thereof;
a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern;
a second conductor pattern formed on the insulating substrate to sense the potential of the surface electrode of the semiconductor die device;
a first bonding wire to connect the surface electrode and the first conductor pattern;
a second bonding wire to connect the surface electrode and the second conductor pattern;
a voltage sensor which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and
a deterioration detector to detect deterioration of the first bonding wire by using the sensed potential difference.
2. The semiconductor device according to claim 1 , wherein the voltage sensor senses the potential difference due to an inductance of the first bonding wire.
3. The semiconductor device according to claim 2 , wherein the deterioration detector includes a reference voltage generator and a comparator, the comparator comparing the potential difference with a reference voltage generated by the reference voltage generator, the deterioration detector sending an error signal output when the potential difference exceeds the reference voltage.
4. The semiconductor device according to claim 3 , wherein the semiconductor device includes a plurality of the semiconductor die devices, the plurality of semiconductor die devices being connected in parallel to the first conductor pattern.
5. The semiconductor device according to claim 3 , wherein the semiconductor device includes a plurality of the semiconductor die devices, at least two of the plurality of semiconductor die devices and the first conductor pattern being connected in series.
6. The semiconductor device according to claim 3 , wherein
the surface electrode and the first conductor pattern are connected via a third conductor pattern to which the first bonding wire and a third bonding wire are connected, and
the voltage sensor senses a potential difference between the first conductor pattern and the third conductor pattern and a potential difference between the second conductor pattern and the third conductor pattern.
7. A power converter comprising:
a main conversion circuit comprising the semiconductor device according to claim 3 to convert input electricity and sends the converted electricity output; and
a control circuit to send a control signal output to control the main conversion circuit to the main conversion circuit.
8. The semiconductor device according to claim 2 , wherein the semiconductor device includes a plurality of the semiconductor die devices, the plurality of semiconductor die devices being connected in parallel to the first conductor pattern.
9. The semiconductor device according to claim 8 , wherein
the surface electrode and the first conductor pattern are connected via a third conductor pattern to which the first bonding wire and a third bonding wire are connected, and
the voltage sensor senses a potential difference between the first conductor pattern and the third conductor pattern and a potential difference between the second conductor pattern and the third conductor pattern.
10. The semiconductor device according to claim 2 , wherein the semiconductor device includes a plurality of the semiconductor die devices, at least two of the plurality of semiconductor die devices and the first conductor pattern being connected in series.
11. The semiconductor device according to claim 10 , wherein
the surface electrode and the first conductor pattern are connected via a third conductor pattern to which the first bonding wire and a third bonding wire are connected, and
the voltage sensor senses a potential difference between the first conductor pattern and the third conductor pattern and a potential difference between the second conductor pattern and the third conductor pattern.
12. The semiconductor device according to claim 2 , wherein the semiconductor device includes a plurality of the semiconductor die devices, at least two of the plurality of semiconductor die devices and the first conductor pattern being connected in series.
13. The semiconductor device according to claim 2 , wherein
the surface electrode and the first conductor pattern are connected via a third conductor pattern to which the first bonding wire and a third bonding wire are connected, and
the voltage sensor senses a potential difference between the first conductor pattern and the third conductor pattern and a potential difference between the second conductor pattern and the third conductor pattern.
14. A power converter comprising:
a main conversion circuit comprising the semiconductor device according to claim 2 to convert input electricity and sends the converted electricity output; and
a control circuit to send a control signal output to control the main conversion circuit to the main conversion circuit.
15. The semiconductor device according to claim 1 , wherein the deterioration detector includes a reference voltage generator and a comparator, the comparator comparing the potential difference with a reference voltage generated by the reference voltage generator, the deterioration detector sending an error signal output when the potential difference exceeds the reference voltage.
16. The semiconductor device according to claim 15 , wherein the semiconductor device includes a plurality of the semiconductor die devices, the plurality of semiconductor die devices being connected in parallel to the first conductor pattern.
17. The semiconductor device according to claim 1 , wherein the semiconductor device includes a plurality of the semiconductor die devices, the plurality of semiconductor die devices being connected in parallel to the first conductor pattern.
18. The semiconductor device according to claim 1 , wherein the semiconductor device includes a plurality of the semiconductor die devices, at least two of the plurality of semiconductor die devices and the first conductor pattern being connected in series.
19. The semiconductor device according to claim 1 , wherein
the surface electrode and the first conductor pattern are connected via a third conductor pattern to which the first bonding wire and a third bonding wire are connected, and
the voltage sensor senses a potential difference between the first conductor pattern and the third conductor pattern and a potential difference between the second conductor pattern and the third conductor pattern.
20. A power converter comprising:
a main conversion circuit comprising the semiconductor device according to claim 1 to convert input electricity and sends the converted electricity output; and
a control circuit to send a control signal output to control the main conversion circuit to the main conversion circuit.